IXTA3N50D2 IXTP3N50D2SymbolTest Conditions Characteristic ValuesTO-263 (IXTA) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 30V, I = 1.5A, Note 1 1.3 2.1 S fs DS D C 1070 pF issC V = -10V, V = 25V, f = 1MHz 102 pF oss GS DS C 24 pF rsst 27 ns d(on)Resistive Switching Times 1. Gate t 71 ns 2. Drain r V = 5V, V = 250V, I = 1.5A 3. Source t GS DS D 56 ns 4. Drain d(off) R = 3.3 (External) Bottom t G 42 ns Side fQ 40 nC g(on)Q V = 5V, V = 250V, I = 1.5A 5 nC Dim. Millimeter Inches gs GS DS D Min. Max. Min. Max. Q 20 nC A 4.06 4.83 .160 .190 gd b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 R 1.00 C/W thJC c 0.40 0.74 .016 .029 R TO-220 0.50 C/W c2 1.14 1.40 .045 .055 thCS D 8.64 9.65 .340 .380 D1 8.00 8.89 .280 .320 E 9.65 10.41 .380 .405 E1 6.22 8.13 .270 .320 e 2.54 BSC .100 BSC Safe-Operating-Area Specification L 14.61 15.88 .575 .625 Characteristic Values L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 SymbolTest ConditionsMin. Typ. Max. L3 1.27 1.78 .050 .070 L4 0 0.13 0 .005 SOA V = 400V, I = 0.19A, T = 75C, Tp = 5s 75 W DS D C TO-220 (IXTP) OutlineSource-Drain DiodeSymbolTest Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 3A, V = -10V, Note 1 0.8 1.3 V SD F GS t 340 ns rr I = 3A, -di/dt = 100A/s I F 10.9 A RM V = 100V, V = -10V Q R 1.86 GS μC RM Pins: 1 - Gate 2 - Drain 3 - Source Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537