Datasheet FDN336P (ON Semiconductor)

FDN336P FDN336P
®
Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features
• –1.3 A, –20 V. R This P-Channel 2.5V specified MOSFET is produced DS(ON) = 0.20 Ω @ VGS = –4.5 V using ON Semiconductor’s advanced RDS(ON) = 0.27 Ω @ VGS = –2.5 V PowerTrench process that has been especially tailored • Low gate charge (3.6 nC typical) to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • High performance trench technology for extremely low R These devices are well suited for portable electronics DS(ON) applications: load switching and power management, • SuperSOTTM -3 provides low R battery charging circuits and DC/DC conversion. DS(ON) and 30% higher power handling capability than SOT23 in the same footprint
D
D
S
G S
G SuperSOT -3 TM Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current – Continuous (Note 1a) –1.3 A – Pulsed –10 PD Maximum Power Dissipation (Note 1a) 0.5 W (Note 1b) 0.46 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W
Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity
336 FDN336P 7’’ 8mm 3000 units ©2005 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 4 FDN336P/D