Datasheet ADUM5230 (Analog Devices) - 3

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Data Sheet ADuM5230 SPECIFICATIONS ELECTRICAL CHARACTERISTICS
All voltages are relative to their respective ground. 4.5 V ≤ VDD1 ≤ 5.5 V, 12.0 ≤ VDDB ≤ 18.0 V. All min/max specifications apply over the entire recommended operating range, unless otherwise noted. All typical specifications are at TA = 25°C, VDD1 = 5.0 V, VDDB = 15 V.
Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
DC SPECIFICATIONS Input Supply Current, Quiescent IDD1 (Q) 125 mA IISO = 0 mA, dc signal inputs, VADJ = open Channel B Supply Current, Quiescent IDDB (Q) 1.6 mA Channel A Output Supply Voltage VISO 12 15 18.5 V At 0 kHz Switching Frequency Maximum Channel A Output Supply Current IISO (MAX, 0) 10 mA At 100 kHz Switching Frequency Maximum Channel A Output Supply Current IISO (MAX, 100) 7.5 mA CL = 200 pF Input Supply Current IDD1 200 mA IISO = IISO (MAX, 100) Channel B Supply Current IDDB 1.8 mA CL = 200 pF At 1000 kHz Switching Frequency Maximum Channel A Output Supply Current IISO (MAX, 1000) 5.0 mA CL = 200 pF Input Supply Current IDD1 200 mA IISO = IISO (MAX, 1000) Channel B Supply Current IDDB 7.5 mA CL = 200 pF Input Currents IIA, IIB −10 +0.01 +10 µA 0 ≤ VIA, VIB ≤ 5.5 V Logic High Input Voltage VATH, VBTH 0.7 × VDD1 V Logic Low Input Voltage VATL, VBTL 0.3 × VDD1 V Logic High Output Voltages VOAH, VOBH VISO − 0.1, VISO, VDDB V IOA, IOB = −1 mA VDDB − 0.1 Logic Low Output Voltages VOAL, VOBL 0.1 V IOA, IOB = 1 mA Undervoltage Lockout, VISO and VDDB Supply Positive-Going Threshold VDDBUV+ 8.0 10.1 V Negative-Going Threshold VDDBUV− 7.4 9.0 V Hysteresis VDDBUVH 0.9 V Undervoltage Lockout, VDD1 Supply Positive-Going Threshold VDD1UV+ 3.5 4.2 V Negative-Going Threshold VDD1UV− 3.0 3.9 V Hysteresis VDD1UVH 0.4 V Output Short-Circuit Pulsed Current, Sourcing1 IOA, IOB 100 mA Output Short-Circuit Pulsed Current, Sinking1 IOA, IOB 300 mA SWITCHING SPECIFICATIONS Minimum Pulse Width2 PW 100 ns CL = 200 pF Maximum Switching Frequency3 1 MHz CL = 200 pF Propagation Delay4 tPHL, tPLH 100 ns CL = 200 pF Change vs. Temperature 100 ps/°C Pulse Width Distortion, |tPLH − tPHL| PWD 8 ns CL = 200 pF Channel-to-Channel Matching, Rising or tM2 8 ns CL = 200 pF Falling Matching Edge Polarity5 Channel-to-Channel Matching, Rising vs. tM1 10 ns CL = 200 pF Falling Opposite Edge Polarity6 Rev. C | Page 3 of 15 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS PACKAGE CHARACTERISTICS REGULATORY INFORMATION INSULATION AND SAFETY-RELATED SPECIFICATIONS RECOMMENDED OPERATING CONDITIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFOMANCE CHARACTERISTICS APPLICATIONS INFORMATION THEORY OF OPERATION PRINTED CIRCUIT BOARD (PCB) LAYOUT THERMAL ANALYSIS PROPAGATION DELAY-RELATED PARAMETERS DC CORRECTNESS AND MAGNETIC FIELD IMMUNITY POWER CONSUMPTION INCREASING AND DECREASING AVAILABLE POWER COMMON-MODE TRANSIENT IMMUNITY TYPICAL APPLICATION USAGE INSULATION LIFETIME OUTLINE DIMENSIONS ORDERING GUIDE AUTOMOTIVE PRODUCTS