Datasheet HMC397 (Analog Devices) - 4

HMC397
v03.0109
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +7 Vdc RF Input Power (RFIN)(Vcc = +5 Vdc) +10 dBm 2 Junction Temperature 150 °C Continuous Pdiss (T= 85 °C) 0.339 W (derate 5.21 mW/°C above 85 °C) IP Thermal Resistance 192 °C/W H (junction to die bottom) Storage Temperature -65 to +150 °C - C Operating Temperature -55 to +85 °C S R ELECTROSTATIC SENSITIVE DEVICE IE OBSERVE HANDLING PRECAUTIONS IF L P M
Outline Drawing
K A OC BL IN A NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND 3. BOND PADS ARE 0.004 (0.100) SQUARE 4. BACKSIDE METALLIZATION: GOLD & G 5. BOND PAD METALLIZATION: GOLD R E IV R
Die Packaging Information
[1] D Standard Alternate GP-3 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com
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