Datasheet HMC636ST89, 636ST89E (Analog Devices) - 5

FabricanteAnalog Devices
DescripciónGaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
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HMC636ST89 / 636ST89E. GaAs pHEMT HiGH LinEAriTy. Gain Block, 0.2 - 4.0 GHz. pin Descriptions. Application Circuit. 9 - 5

HMC636ST89 / 636ST89E GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz pin Descriptions Application Circuit 9 - 5

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HMC636ST89 / 636ST89E
v02.0311
GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz pin Descriptions
pin number function Description interface schematic This pin is DC coupled. An off-chip 1 rfin DC blocking capacitor is required. 9 rf output and DC BiAs for the amplifier. 3 rfoUT see Application Circuit for off-chip components. T m s These pins and package bottom must 2, 4 GnD be connected to rf/DC ground. r - e w o p
Application Circuit
r & A e lin s - r ie lif p m A Inf F or o m rat ip o r n ifc ur e n ,is hd e e d lbiv y e Anry alo a g n D d evi cto es ips la beclie ev eo d rtd o e b r e sa: ccH ur iattte itaen M d reliic a r bl o e w . H a o v weev eC r, o n r o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other poration, 20 Alpha Road, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 rights of third parties that may result from its use. Specifications subject to change without notice. No Or P d hoe n r e O : 7 n- 81-li 3 n 2 e 9- a 4 t 7 0 www 0 • O . rdh e itt r o it n e li . n co e a m
9 - 5
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com Application Support: Phon Trademarks and registered trademarks are the property of their respective owners. e: 978-250-334 A 3 p p liocra t ia o pp n S s u @ p h por ittti : Pte. ho c n o e m : 1-800-ANALOG-D