Datasheet BC547B (Multicomp) - 2
| Fabricante | Multicomp |
| Descripción | NPN general purpose transistor |
| Páginas / Página | 4 / 2 — Absolute Maximum Ratings (Ta = 25°C unless otherwise specified). … |
| Revisión | 1.1 |
| Formato / tamaño de archivo | PDF / 186 Kb |
| Idioma del documento | Inglés |
Absolute Maximum Ratings (Ta = 25°C unless otherwise specified). Parameters. Symbol. Value. Unit. Thermal Resistance
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BC547B General Purpose Transistor
Absolute Maximum Ratings (Ta = 25°C unless otherwise specified) Parameters Symbol Value Unit
Collector Emitter Voltage VCEO 45 Collector Emitter Voltage VCES 50 V Collector Base Voltage VCBO Emitter Base Voltage VEBO 6.0 Collector Current Continuous IC 100 Peak ICM 200 mA Base Current Peak IBM 200 Emitter Current Peak IEM Power Dissipation at Ta = 25°C P 500 mW Derate above 25°C TA 4.0 mW/°C Storage Temperature Tstg -65 to +150 °C Junction Temperature Tj 150
Thermal Resistance
Junction to Ambient Rth (j-a) 250 °C/W
Electrical Characteristics (Ta = 25°C unless otherwise specified) Parameters Symbol Test Condition Value Unit
Collector Emitter Voltage VCEO IC = 1mA, IB = 0 >45 Collector Base Voltage VCBO IC = 10µA, IE = 0 >50 V Emitter Base Voltage VEBO IE = 10µA, IC = 0 >6.0 VCB = 30V, IE = 0 <50 I nA CBO TJ = 150°C <5.0 µA Collector Cut off Current VCB = 30V, IE = 0 VCE = 50V, VBE = 0 <15 nA I T CES J = 125°C Collector Cut off Current VCE = 50V, VBE = 0 <4.0 µA DC Current Gain hFE IC = 2mA, VCE = 5V 200 - I <0.25 Collector Emitter Saturation Voltage V C = 10mA, IB = 0.5mA CE (sat) IC = 100mA, IB = 5mA <0.60 I Typical 0.70 Base Emitter Saturation Voltage V C = 10mA, IB = 0.5mA BE (sat) V IC = 100mA, IB = 5mA Typical 0.90 I 0.55 - 0.70 Base Emitter On Voltage V C = 2mA, VCE = 5V BE (on) IC = 10mA, VCE = 5V <0.72 Page <2> 12/05/08 V1.1
Absolute Maximum Ratings (Ta = 25°C unless otherwise specified) Parameters Symbol Value Unit
Collector Emitter Voltage VCEO 45 Collector Emitter Voltage VCES 50 V Collector Base Voltage VCBO Emitter Base Voltage VEBO 6.0 Collector Current Continuous IC 100 Peak ICM 200 mA Base Current Peak IBM 200 Emitter Current Peak IEM Power Dissipation at Ta = 25°C P 500 mW Derate above 25°C TA 4.0 mW/°C Storage Temperature Tstg -65 to +150 °C Junction Temperature Tj 150
Thermal Resistance
Junction to Ambient Rth (j-a) 250 °C/W
Electrical Characteristics (Ta = 25°C unless otherwise specified) Parameters Symbol Test Condition Value Unit
Collector Emitter Voltage VCEO IC = 1mA, IB = 0 >45 Collector Base Voltage VCBO IC = 10µA, IE = 0 >50 V Emitter Base Voltage VEBO IE = 10µA, IC = 0 >6.0 VCB = 30V, IE = 0 <50 I nA CBO TJ = 150°C <5.0 µA Collector Cut off Current VCB = 30V, IE = 0 VCE = 50V, VBE = 0 <15 nA I T CES J = 125°C Collector Cut off Current VCE = 50V, VBE = 0 <4.0 µA DC Current Gain hFE IC = 2mA, VCE = 5V 200 - I <0.25 Collector Emitter Saturation Voltage V C = 10mA, IB = 0.5mA CE (sat) IC = 100mA, IB = 5mA <0.60 I Typical 0.70 Base Emitter Saturation Voltage V C = 10mA, IB = 0.5mA BE (sat) V IC = 100mA, IB = 5mA Typical 0.90 I 0.55 - 0.70 Base Emitter On Voltage V C = 2mA, VCE = 5V BE (on) IC = 10mA, VCE = 5V <0.72 Page <2> 12/05/08 V1.1