Datasheet SMBT3904PN (Infineon) - 3
| Fabricante | Infineon |
| Descripción | NPN / PNP Silicon Switching Transistor Array |
| Páginas / Página | 9 / 3 — SMBT3904...PN. Electrical Characteristics. Parameter. Symbol. Values. … |
| Revisión | 01_01 |
| Formato / tamaño de archivo | PDF / 868 Kb |
| Idioma del documento | Inglés |
SMBT3904...PN. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. typ. max. AC Characteristics
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SMBT3904...PN Electrical Characteristics
at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. AC Characteristics
Transition frequency fT 250 - - MHz IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb - - 3.5 pF VCB = 10 V, f = 1 MHz Emitter-base capacitance Ceb - - 10 VEB = 0.5 V, f = 1 MHz Delay time td - - 35 ns VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time tr - - 35 VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time tstg - - 225 VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Fall time tf - - 75 VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Noise figure F - - 5 dB IC = 100 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 1 kΩ 3 2012-08-21
at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. AC Characteristics
Transition frequency fT 250 - - MHz IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb - - 3.5 pF VCB = 10 V, f = 1 MHz Emitter-base capacitance Ceb - - 10 VEB = 0.5 V, f = 1 MHz Delay time td - - 35 ns VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time tr - - 35 VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time tstg - - 225 VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Fall time tf - - 75 VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Noise figure F - - 5 dB IC = 100 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 1 kΩ 3 2012-08-21