Datasheet SMBT3904 / MMBT3904 (Infineon)
| Fabricante | Infineon |
| Descripción | NPN Silicon Switching Transistors |
| Páginas / Página | 11 / 1 — SMBT3904...MMBT3904. NPN Silicon Switching Transistors. Type. Marking. … |
| Revisión | 01_01 |
| Formato / tamaño de archivo | PDF / 883 Kb |
| Idioma del documento | Inglés |
SMBT3904...MMBT3904. NPN Silicon Switching Transistors. Type. Marking. Pin Configuration. Package. Maximum Ratings Parameter. Symbol
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SMBT3904...MMBT3904 NPN Silicon Switching Transistors
• High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S: For orientation in reel see package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101
Type Marking Pin Configuration Package
SMBT3904/MMBT3904 s1A 1=B 2=E 3=C - - - SOT23 SMBT3904S s1A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings Parameter Symbol Value Unit
Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 60 Emitter-base voltage VEBO 6 Collector current IC 200 mA Total power dissipation- Ptot mV TS ≤ 71°C, SOT23, SMBT3904 330 TS ≤ 115°C, SOT363, SMBT3904S 250 Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150
Thermal Resistance Parameter Symbol Value Unit
Junction - soldering point1) RthJS K/W SMBT3904/MMBT3904 ≤ 240 SMBT3904S ≤ 140 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2012-08-21
• High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S: For orientation in reel see package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101
Type Marking Pin Configuration Package
SMBT3904/MMBT3904 s1A 1=B 2=E 3=C - - - SOT23 SMBT3904S s1A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings Parameter Symbol Value Unit
Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 60 Emitter-base voltage VEBO 6 Collector current IC 200 mA Total power dissipation- Ptot mV TS ≤ 71°C, SOT23, SMBT3904 330 TS ≤ 115°C, SOT363, SMBT3904S 250 Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150
Thermal Resistance Parameter Symbol Value Unit
Junction - soldering point1) RthJS K/W SMBT3904/MMBT3904 ≤ 240 SMBT3904S ≤ 140 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2012-08-21