Datasheet MMBT3906L, SMMBT3906L (ON Semiconductor) - 6
| Fabricante | ON Semiconductor |
| Descripción | PNP Bipolar Transistor |
| Páginas / Página | 7 / 6 — MMBT3906L, SMMBT3906L. Figure 15. Collector Emitter Saturation Voltage. … |
| Revisión | 13 |
| Formato / tamaño de archivo | PDF / 89 Kb |
| Idioma del documento | Inglés |
MMBT3906L, SMMBT3906L. Figure 15. Collector Emitter Saturation Voltage. Figure 16. Base Emitter Saturation Voltage vs
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MMBT3906L, SMMBT3906L
0.50 1.4 0.45 I I C/IB = 10 C/IB = 10 150°C 1.2 0.40 25°C 0.35 AGE (V) AGE (V) 1.0 T −55°C T OR−EMITTER 0.30 −55°C 0.25 0.8 25°C TION VOL 0.20 , BASE−EMITTER TION VOL 0.6 , COLLECT 0.15 sat) TURA BE( TURA 150°C 0.10 V SA SA 0.4 CE(sat)V 0.05 0 0.2 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 15. Collector Emitter Saturation Voltage Figure 16. Base Emitter Saturation Voltage vs. vs. Collector Current Collector Current
1.4 1000 VCE = 1 V VCE = 2 V 1.2 AGE (V) TA = 25°C T 1.0 −55°C 0.8 100 25°C 0.6 PRODUCT (MHz) , BASE−EMITTER VOL 150°C 0.4 on) , CURRENT−GAIN−BANDWIDTH BE( f T V 0.2 10 0.0001 0.001 0.01 0.1 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA)
Figure 17. Base Emitter Voltage vs. Collector Figure 18. Current Gain Bandwidth vs. Current Collector Current
1.0 1 1 ms ° 1 s 100 ms 10 ms 0.5 +25°C TO +125°C qVC FOR VCE(sat) Thermal Limit 0 0.1 -55°C TO +25°C -0.5 IC (A) +25°C TO +125°C TURE COEFFICIENTS (mV/ C) 0.01 -1.0 -55°C TO +25°C -1.5 qVB FOR VBE(sat) , TEMPERA Single Pulse Test V @ T q 0.001 A = 25°C -2.0 0 20 40 60 80 100 120 140 160 180 200 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VCE (Vdc)
Figure 19. Temperature Coefficients Figure 20. Safe Operating Area www.onsemi.com 6
0.50 1.4 0.45 I I C/IB = 10 C/IB = 10 150°C 1.2 0.40 25°C 0.35 AGE (V) AGE (V) 1.0 T −55°C T OR−EMITTER 0.30 −55°C 0.25 0.8 25°C TION VOL 0.20 , BASE−EMITTER TION VOL 0.6 , COLLECT 0.15 sat) TURA BE( TURA 150°C 0.10 V SA SA 0.4 CE(sat)V 0.05 0 0.2 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 15. Collector Emitter Saturation Voltage Figure 16. Base Emitter Saturation Voltage vs. vs. Collector Current Collector Current
1.4 1000 VCE = 1 V VCE = 2 V 1.2 AGE (V) TA = 25°C T 1.0 −55°C 0.8 100 25°C 0.6 PRODUCT (MHz) , BASE−EMITTER VOL 150°C 0.4 on) , CURRENT−GAIN−BANDWIDTH BE( f T V 0.2 10 0.0001 0.001 0.01 0.1 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA)
Figure 17. Base Emitter Voltage vs. Collector Figure 18. Current Gain Bandwidth vs. Current Collector Current
1.0 1 1 ms ° 1 s 100 ms 10 ms 0.5 +25°C TO +125°C qVC FOR VCE(sat) Thermal Limit 0 0.1 -55°C TO +25°C -0.5 IC (A) +25°C TO +125°C TURE COEFFICIENTS (mV/ C) 0.01 -1.0 -55°C TO +25°C -1.5 qVB FOR VBE(sat) , TEMPERA Single Pulse Test V @ T q 0.001 A = 25°C -2.0 0 20 40 60 80 100 120 140 160 180 200 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VCE (Vdc)
Figure 19. Temperature Coefficients Figure 20. Safe Operating Area www.onsemi.com 6