Datasheet MMBT3904WT1, SMMBT3904WT1G, MMBT3906WT1, SMMBT3906WT1G (ON Semiconductor) - 8

FabricanteON Semiconductor
DescripciónNPN and PNP Bipolar Transistor
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MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,. SMMBT3906WT1G, PNP. MMBT3904WT1, SMMBT3904WT1

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1

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MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1
TJ = 25°C TJ = 125°C 1.0 10 MMBT3904WT1 MMBT3904WT1 7.0 0.5 +25°C TO +125°C ° qVC FOR VCE(sat) 5.0 0 -55°C TO +25°C (mV/ C) ANCE (pF) Cibo -0.5 3.0 ACIT -55°C TO +25°C -1.0 CAP C COEFFICIENT 2.0 obo +25°C TO +125°C -1.5 qVB FOR VBE(sat) -2.0 1.0 0 20 40 60 80 100 120 140 160 180 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 IC, COLLECTOR CURRENT (mA) REVERSE BIAS VOLTAGE (VOLTS)
Figure 18. Temperature Coefficients Figure 19. Capacitance
1000 1 100 mS 10 mS VCE = 1 V TA = 25°C 1 mS 1 S 0.1 100 OR CURRENT (A) Thermal Limit 0.01 PRODUCT (MHz) , COLLECT , CURRENT−GAIN−BANDWIDTH I C f T 10 0.001 0.1 1 10 100 1000 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 20. Current Gain Bandwidth Product Figure 21. Safe Operating Area vs. Collector Current www.onsemi.com 8