Datasheet 2N5210 (Fairchild)
| Fabricante | Fairchild |
| Descripción | NPN General Purpose Amplifier |
| Páginas / Página | 7 / 1 — 2N5210/MMBT5210. NPN General Purpose Amplifier. TO-92. SOT-23. Mark: 3M. … |
| Revisión | B |
| Formato / tamaño de archivo | PDF / 92 Kb |
| Idioma del documento | Inglés |
2N5210/MMBT5210. NPN General Purpose Amplifier. TO-92. SOT-23. Mark: 3M. Absolute Maximum Ratings*. Symbol. Parameter. Value. Units. NOTES
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2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C
This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.
E C TO-92 BE B SOT-23 Mark: 3M Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 100 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Max. Symbol Characteristic Units 2N5210 MMBT5210
P Total Device Dissipation 625 350 mW D Derate above 25°C 5.0 2.8 mW/°C Rθ Thermal Resistance, Junction to Case 83.3 °C/W JC Rθ Thermal Resistance, Junction to Ambient 200 357 °C/W JA 2002 Fairchild Semiconductor Corporation 2N5210, Rev B
This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.
E C TO-92 BE B SOT-23 Mark: 3M Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 100 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Max. Symbol Characteristic Units 2N5210 MMBT5210
P Total Device Dissipation 625 350 mW D Derate above 25°C 5.0 2.8 mW/°C Rθ Thermal Resistance, Junction to Case 83.3 °C/W JC Rθ Thermal Resistance, Junction to Ambient 200 357 °C/W JA 2002 Fairchild Semiconductor Corporation 2N5210, Rev B