Datasheet MBRF20100CT (ON Semiconductor)

link to page 3 MBRF20100CTG Switch-mode Schottky Power Rectifier The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
www.onsemi.com
rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes.
SCHOTTKY BARRIER RECTIFIER Features
• Highly Stable Oxide Passivated Junction
20 AMPERES, 100 VOLTS
• Very Low Forward Voltage Drop • Matched Dual Die Construction 1 • 2 High Junction Temperature Capability • 3 High dv/dt Capability • Excellent Ability to Withstand Reverse Avalanche Energy Transients • Guardring for Stress Protection • Epoxy Meets UL 94 V−0 @ 0.125 in • Electrically Isolated. No Isolation Hardware Required. • These are Pb−Free Devices
TO−220 FULLPAK
t
CASE 221AH Mechanical Characteristics:
• Case: Epoxy, Molded 1 • Weight: 1.9 Grams (Approximately) 2 3 • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes:
ORDERING AND MARKING INFORMATION
260°C Max. for 10 Seconds See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
July, 2016 − Rev. 10 MBRF20100CT/D