Datasheet 2N3906 (Multicomp) - 2
| Fabricante | Multicomp |
| Descripción | PNP Silicon Planar Switching Transistors for General Purpose Switching and Amplifier Applications in TO-92 Plastic Package |
| Páginas / Página | 4 / 2 — Absolute Maximum Ratings (Ta = 25°C unless otherwise specified). … |
| Revisión | 1.1 |
| Formato / tamaño de archivo | PDF / 155 Kb |
| Idioma del documento | Inglés |
Absolute Maximum Ratings (Ta = 25°C unless otherwise specified). Description. Symbol. Value. Unit. Thermal Resistance
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2N3906 Low Power Bipolar Transistors
Absolute Maximum Ratings (Ta = 25°C unless otherwise specified) Description Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Collector-Base Voltage VCBO V Emitter-Base Voltage VEBO 5.0 Collector Current Continuous IC 200 mA Power Dissipation at Ta = 25°C 625 mW Derate above 25°C 5.0 mW/°C PD Power Dissipation at Tc = 25°C 1.5 W Derate above 25°C 12 mW/°C Operating and Storage JunctionTemperature Range Tj, Tstg -55 to +150 °C
Thermal Resistance
Junction to Case Rth (j-c) 125 °C/W Junction to Ambient Rth (j-a) 200
Electrical Characteristics (Ta = 25°C unless otherwise specified) Description Symbol Test Condition T2N3906 Unit
Collector-Emitter Voltage VCEO IC = 1mA, IB = 0 >40 Collector-Base Voltage VCBO IC = 10µA, IE = 0 V Emitter-Base Voltage VEBO IE = 10µA, IC = 0 >5.0 Collector-Cut off Current ICEX VCE = 30V, VEB = 3V <50 nA Emitter-Cut off Current IBL VCE = 30V, VEB = 3V IC = 0.1mA, VCE = 1V >60 IC = 1mA, VCE = 1V >80 DC Current Gain hFE* IC = 10mA, VCE = 1V 100 -300 - I >60 C = 50mA, VCE = 1V I >30 C = 100mA, VCE = 1V <0.25 Collector Emitter Saturation Voltage VCE (sat)* I <0.4 C = 10mA, IB = 1mA V IC = 50mA, IB = 5mA Base Emitter Saturation Voltage VBE (sat)* 0.65 - 0.85 <0.95 *Pulse Condition : Pulse Width = 300µs, Duty Cycle = 2%. Page <2> 12/05/08 V1.1
Absolute Maximum Ratings (Ta = 25°C unless otherwise specified) Description Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Collector-Base Voltage VCBO V Emitter-Base Voltage VEBO 5.0 Collector Current Continuous IC 200 mA Power Dissipation at Ta = 25°C 625 mW Derate above 25°C 5.0 mW/°C PD Power Dissipation at Tc = 25°C 1.5 W Derate above 25°C 12 mW/°C Operating and Storage JunctionTemperature Range Tj, Tstg -55 to +150 °C
Thermal Resistance
Junction to Case Rth (j-c) 125 °C/W Junction to Ambient Rth (j-a) 200
Electrical Characteristics (Ta = 25°C unless otherwise specified) Description Symbol Test Condition T2N3906 Unit
Collector-Emitter Voltage VCEO IC = 1mA, IB = 0 >40 Collector-Base Voltage VCBO IC = 10µA, IE = 0 V Emitter-Base Voltage VEBO IE = 10µA, IC = 0 >5.0 Collector-Cut off Current ICEX VCE = 30V, VEB = 3V <50 nA Emitter-Cut off Current IBL VCE = 30V, VEB = 3V IC = 0.1mA, VCE = 1V >60 IC = 1mA, VCE = 1V >80 DC Current Gain hFE* IC = 10mA, VCE = 1V 100 -300 - I >60 C = 50mA, VCE = 1V I >30 C = 100mA, VCE = 1V <0.25 Collector Emitter Saturation Voltage VCE (sat)* I <0.4 C = 10mA, IB = 1mA V IC = 50mA, IB = 5mA Base Emitter Saturation Voltage VBE (sat)* 0.65 - 0.85 <0.95 *Pulse Condition : Pulse Width = 300µs, Duty Cycle = 2%. Page <2> 12/05/08 V1.1