Datasheet 7UL1G34FS (Toshiba) - 2 Fabricante Toshiba Descripción Non-Inverter. L-MOS LVP series Páginas / Página 8 / 2 — 7UL1G34FS. 5. IEC. Logic. Symbol. 6. Truth. Table. A. Y. L. L. H. H. 7. … Formato / tamaño de archivo PDF / 155 Kb Idioma del documento Inglés
7UL1G34FS. 5. IEC. Logic. Symbol. 6. Truth. Table. A. Y. L. L. H. H. 7. Absolute. Maximum. Ratings. (Note). (Unless. otherwise. specified,. Ta. =. 25. ). Characteristics
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Línea de modelo para esta hoja de datos Versión de texto del documento 7UL1G34FS 5. IEC Logic Symbol 6. Truth Table A Y L L H H 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Supply voltage VCC -0.5 to 4.6 V Input voltage VIN -0.5 to 4.6 V DC output voltage VOUT (Note 1) -0.5 to 4.6 V (Note 2) -0.5 to VCC + 0.5 Input diode current IIK -20 mA Output diode current IOK (Note 3) -20 mA DC output current IOUT ±25 mA VCC/ground current ICC ±50 mA Power dissipation PD 50 mW Storage temperature Tstg -65 to 150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: VCC = 0 V Note 2: High (H) or Low (L) state. IOUT absolute maximum rating must be observed. Note 3: VOUT < GND ©2018 2 2018-06-07 Toshiba Electronic Devices & Storage Corporation Rev.2.0