Datasheet 2N3905/2N3906 (Motorola) - 5

FabricanteMotorola
DescripciónPNP Silicon General Purpose Transistors
Páginas / Página6 / 5 — TYPICAL STATIC CHARACTERISTICS. Figure 13. DC Current Gain. Figure 14. …
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TYPICAL STATIC CHARACTERISTICS. Figure 13. DC Current Gain. Figure 14. Collector Saturation Region. Figure 15. “ON” Voltages

TYPICAL STATIC CHARACTERISTICS Figure 13 DC Current Gain Figure 14 Collector Saturation Region Figure 15 “ON” Voltages

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TYPICAL STATIC CHARACTERISTICS
2.0 TJ = +125°C VCE = 1.0 V 1.0 +25°C (NORMALIZED) 0.7 – 55°C GAIN 0.5 0.3 0.2 FEh , DC CURRENT 0.10.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
1.0 TS) T (VOL J = 25°C 0.8 TAGE IC = 1.0 mA 10 mA 30 mA 100 mA VOL 0.6 EMITTER 0.4 OR 0.2 CEV , COLLECT 00.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA)
Figure 14. Collector Saturation Region
1.0 1.0 T ° J = 25°C VBE(sat) @ IC/IB = 10 0.8 0.5 +25°C TO +125°C q V VC FOR VCE(sat) BE @ VCE = 1.0 V TS) 0 0.6 – 55°C TO +25°C (VOL – 0.5 TAGE 0.4 +25°C TO +125°C , VOL TURE COEFFICIENTS (mV/ C) V – 1.0 VCE(sat) @ IC/IB = 10 – 55°C TO +25°C 0.2 – 1.5 qVB FOR VBE(sat) , TEMPERA Vq 0 – 2.0 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 15. “ON” Voltages Figure 16. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data 5