Datasheet MTD20P06HDL (ON Semiconductor) - 3
| Fabricante | ON Semiconductor |
| Descripción | Power MOSFET 60 V, 20 A, Logic Level, P-Channel DPAK |
| Páginas / Página | 8 / 3 — MTD20P06HDL. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region … |
| Revisión | 6 |
| Formato / tamaño de archivo | PDF / 88 Kb |
| Idioma del documento | Inglés |
MTD20P06HDL. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region Characteristics. Figure 2. Transfer Characteristics
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MTD20P06HDL TYPICAL ELECTRICAL CHARACTERISTICS
30 30 T V J = 25°C GS = 10 V 9 V VDS ≥ 5 V 8 V 25 25 25°C TJ = −55°C 20 7 V (AMPS) 20 (AMPS) 100°C 15 15 6 V 10 10 5 V , DRAIN CURRENT , DRAIN CURRENT I D I D 5 5 4 V 0 0 0 1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.40 0.275 (OHMS) V (OHMS) GS = 5 V TJ = 25°C 0.250 ANCE 0.32 ANCE 0.225 RESIST RESIST 0.24 0.200 TJ = 100°C 25°C 0.175 0.16 O−SOURCE O−SOURCE VGS = 5 V −55°C 0.150 0.08 , DRAIN−T , DRAIN−T 0.125 10 V DS(on) 0 DS(on) 0.100 R R 0 5 10 15 20 25 30 0 5 10 15 20 25 30 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Gate Voltage
1.8 100 ANCE V V GS = 5 V GS = 0 V 1.6 ID = 7.5 A RESIST 1.4 1.2 TJ = 125°C 1 O−SOURCE 10 100°C 0.8 (NORMALIZED) , LEAKAGE (nA) 0.6 , DRAIN−T I DSS 0.4 DS(on) 0.2 R 0 1 −50 −25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 T V J, JUNCTION TEMPERATURE (°C) DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage Temperature Current versus Voltage http://onsemi.com 3
30 30 T V J = 25°C GS = 10 V 9 V VDS ≥ 5 V 8 V 25 25 25°C TJ = −55°C 20 7 V (AMPS) 20 (AMPS) 100°C 15 15 6 V 10 10 5 V , DRAIN CURRENT , DRAIN CURRENT I D I D 5 5 4 V 0 0 0 1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.40 0.275 (OHMS) V (OHMS) GS = 5 V TJ = 25°C 0.250 ANCE 0.32 ANCE 0.225 RESIST RESIST 0.24 0.200 TJ = 100°C 25°C 0.175 0.16 O−SOURCE O−SOURCE VGS = 5 V −55°C 0.150 0.08 , DRAIN−T , DRAIN−T 0.125 10 V DS(on) 0 DS(on) 0.100 R R 0 5 10 15 20 25 30 0 5 10 15 20 25 30 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Gate Voltage
1.8 100 ANCE V V GS = 5 V GS = 0 V 1.6 ID = 7.5 A RESIST 1.4 1.2 TJ = 125°C 1 O−SOURCE 10 100°C 0.8 (NORMALIZED) , LEAKAGE (nA) 0.6 , DRAIN−T I DSS 0.4 DS(on) 0.2 R 0 1 −50 −25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 T V J, JUNCTION TEMPERATURE (°C) DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage Temperature Current versus Voltage http://onsemi.com 3