Datasheet MPSA63, MPSA64 (ON Semiconductor) - 3
| Fabricante | ON Semiconductor |
| Descripción | Darlington Transistors |
| Páginas / Página | 4 / 3 — MPSA63, MPSA64. Figure 1. DC Current Gain. Figure 2. “On” Voltage. Figure … |
| Formato / tamaño de archivo | PDF / 146 Kb |
| Idioma del documento | Inglés |
MPSA63, MPSA64. Figure 1. DC Current Gain. Figure 2. “On” Voltage. Figure 3. Collector Saturation Region
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MPSA63, MPSA64
200 TA = 125°C K) 100 70 (X1.0 50 - 10 V GAIN 30 25°C VCE = - 2.0 V 20 - 5.0 V CURRENT 10 ,DC 7.0 5.0 - 55°C h FE 3.0 2.0-0.3 - 0.5 - 0.7 - 1.0 - 2.0 - 3.0 - 5.0 - 7.0 - 10 - 20 - 30 - 50 - 70 - 100 - 200 - 300 IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
) - 2.0 TS - 2.0 T TA = 25°C A = 25°C (VOL - 1.8 - 1.6 VBE(sat) @ IC/IB = 100 TAGE -1.6 TS) VOL IC = - 10 mA - 50 mA - 100 mA - 175 mA - 300 mA (VOL - 1.2 - 1.4 VBE(on) @ VCE = - 5.0 V TAGE -0.8 V - 1.2 CE(sat) @ IC/IB = 1000 -EMITTER OR V,VOL IC/IB = 100 - 1.0 - 0.4 ,COLLECT - 0.8 0 V CE - 0.6 - 0.3 - 0.5 --1.0 - 2 --3 - 5 --10 --20 --30 --50 --100 - 200 - 300 - 0.1--0.2 - 0.5 - 1 --2 - 5 --10 --20 --50 --100- 200- 500 --1K--2K - 5K--10K IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)
Figure 2. “On” Voltage Figure 3. Collector Saturation Region
10 - 1000 VCE = - 5.0 V GAIN 1.0 ms 100 ms 4.0 f = 100 MHz A) 3.0 T (m A = 25°C - 300 2.0 CURRENT - 200 TA = 25°C 1.0 s CURRENT 1.0 - 100 TC = 25°C OR FREQUENCY CURRENT LIMIT 0.4 - 50 THERMAL LIMIT HIGH ,COLLECT SECOND BREAKDOWN LIMIT |, 0.2 I C -20 (DUTY CYCLE FE ≤ 10%) MPSA62 |h MPSA63 0.1 - 10 - 1.0 - 2.0 - 5.0 - 10 - 20 - 50 - 100 - 200 - 500 - 1K - 1.0 - 2.0 - 4.0 - 6.0 - 10 - 20 - 40 - 60 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR VOLTAGE (VOLTS)
Figure 4. High Frequency Current Gain Figure 5. Active Region, Safe Operating Area http://onsemi.com 3
200 TA = 125°C K) 100 70 (X1.0 50 - 10 V GAIN 30 25°C VCE = - 2.0 V 20 - 5.0 V CURRENT 10 ,DC 7.0 5.0 - 55°C h FE 3.0 2.0-0.3 - 0.5 - 0.7 - 1.0 - 2.0 - 3.0 - 5.0 - 7.0 - 10 - 20 - 30 - 50 - 70 - 100 - 200 - 300 IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
) - 2.0 TS - 2.0 T TA = 25°C A = 25°C (VOL - 1.8 - 1.6 VBE(sat) @ IC/IB = 100 TAGE -1.6 TS) VOL IC = - 10 mA - 50 mA - 100 mA - 175 mA - 300 mA (VOL - 1.2 - 1.4 VBE(on) @ VCE = - 5.0 V TAGE -0.8 V - 1.2 CE(sat) @ IC/IB = 1000 -EMITTER OR V,VOL IC/IB = 100 - 1.0 - 0.4 ,COLLECT - 0.8 0 V CE - 0.6 - 0.3 - 0.5 --1.0 - 2 --3 - 5 --10 --20 --30 --50 --100 - 200 - 300 - 0.1--0.2 - 0.5 - 1 --2 - 5 --10 --20 --50 --100- 200- 500 --1K--2K - 5K--10K IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)
Figure 2. “On” Voltage Figure 3. Collector Saturation Region
10 - 1000 VCE = - 5.0 V GAIN 1.0 ms 100 ms 4.0 f = 100 MHz A) 3.0 T (m A = 25°C - 300 2.0 CURRENT - 200 TA = 25°C 1.0 s CURRENT 1.0 - 100 TC = 25°C OR FREQUENCY CURRENT LIMIT 0.4 - 50 THERMAL LIMIT HIGH ,COLLECT SECOND BREAKDOWN LIMIT |, 0.2 I C -20 (DUTY CYCLE FE ≤ 10%) MPSA62 |h MPSA63 0.1 - 10 - 1.0 - 2.0 - 5.0 - 10 - 20 - 50 - 100 - 200 - 500 - 1K - 1.0 - 2.0 - 4.0 - 6.0 - 10 - 20 - 40 - 60 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR VOLTAGE (VOLTS)
Figure 4. High Frequency Current Gain Figure 5. Active Region, Safe Operating Area http://onsemi.com 3