Datasheet 2N3906 (ON Semiconductor)

link to page 1 link to page 3 2N3906 General Purpose Transistors
PNP Silicon http://onsemi.com Features
• Pb−Free Packages are Available* COLLECTOR 3 2 BASE
MAXIMUM RATINGS Rating Symbol Value Unit
1 Collector − Emitter Voltage V EMITTER CEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 200 mAdc
TO−92
Total Device Dissipation @ T
CASE 29
A = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C
STYLE 1
Total Power Dissipation @ TA = 60°C PD 250 mW 1 1 2 Total Device Dissipation @ T 2 C = 25°C PD 1.5 W 3 3 Derate above 25°C 12 mW/°C STRAIGHT LEAD BENT LEAD Operating and Storage Junction T BULK PACK TAPE & REEL J, Tstg −55 to +150 °C Temperature Range AMMO PACK
THERMAL CHARACTERISTICS
(Note 1)
Characteristic Symbol Max Unit MARKING DIAGRAM
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W 2N Stresses exceeding Maximum Ratings may damage the device. Maximum 3906 Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the ALYWG Recommended Operating Conditions may affect device reliability. G 1. Indicates Data in addition to JEDEC Requirements. A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
February, 2010 − Rev. 4 2N3906/D