Datasheet 2N3906, MMBT3906, PZT3906 (ON Semiconductor) - 3

2 N 3906 / MMBT3906 / PZT Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Max. Unit OFF CHARACTERISTICS
Collector-Emitter Breakdown V(BR)CEO Voltage(4) IC = -1.0 mA, IB = 0 -40 V V(BR)CBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V IBL Base Cut-Off Current VCE = -30 V, VBE = 3.0 V -50 nA
3906 —
ICEX Collector Cut-Off Current VCE = -30 V, VBE = 3.0 V -50 nA
ON CHARACTERISTICS
IC = -0.1 mA, VCE = -1.0 V 60
P N
IC = -1.0 mA, VCE = -1.0 V 80
P Gen
hFE DC Current Gain(4) IC = -10 mA, VCE = -1.0 V 100 300 IC = -50 mA, VCE = -1.0 V 60
era
IC = -100 mA, VCE = -1.0V 30
l-Purpose
Collector-Emitter Saturation IC = -10 mA, IB = -1.0 mA -0.25 VCE(sat) V Voltage IC = -50 mA, IB = -5.0 mA -0.40 IC = -10 mA, IB = -1.0 mA -0.65 -0.85 VBE(sat) Base-Emitter Saturation Voltage V IC = -50 mA, IB = -5.0 mA -0.95
Amplifier SMALL SIGNAL CHARACTERISTICS
I f C = -10 mA, VCE = -20 V, T Current Gain - Bandwidth Product 250 MHz f = 100 MHz V C CB = -5.0 V, IE = 0, obo Output Capacitance 4.5 pF f = 100 kHz V C EB = -0.5 V, IC = 0, ibo Input Capacitance 10.0 pF f = 100 kHz IC = -100 μA, VCE = -5.0 V, NF Noise Figure RS = 1.0 kΩ, 4.0 dB f = 10 Hz to 15.7 kHz
SWITCHING CHARACTERISTICS
td Delay Time V 35 ns CC = -3.0 V, VBE = -0.5 V I t C = -10 mA, IB1 = -1.0 mA r Rise Time 35 ns ts Storage Time V 225 ns CC = -3.0 V, IC = -10 mA, I t B1 = IB2 = -1.0 mA f Fall Time 75 ns
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. www.onsemi.com 3