Datasheet IRL3705N (Infineon) - 4
| Fabricante | Infineon |
| Descripción | 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
| Páginas / Página | 9 / 4 — Fig 5. Fig 6. Fig. 7. Fig 8 |
| Revisión | 01_02 |
| Formato / tamaño de archivo | PDF / 455 Kb |
| Idioma del documento | Inglés |
Fig 5. Fig 6. Fig. 7. Fig 8
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IRL3705NPbF 6000 15 V = 0V, f = 1MHz GS I D = 46A C is s = C + gs C g d , C ds SHORTED ) V = 44V DS C rs s = C gd V V = 28V 5000 C DS iss C os = C s d s + C gd 12 e ( oltag 4000 e V 9 itance (pF) 3000 C ourc oss S apac 6 , C 2000 ate-to- C G C , rss GS 3 1000 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20 40 60 80 100 120 140 VDS , Drain-to-Source Voltage (V) Q , Total Gate Charge (nC) G
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) (A) urrent 10µs (A 100 rain C rent D 100µs 100 T = 175°C n Cur J ai everse T J= 25°C 1ms R , Dr 10 , I D I SD 10ms T = 25°C C T = 175°C V = J GS 0V 10 A Single Pulse 1 A 0.4 0.8 1.2 1.6 2.0 2.4 2.8 1 10 100 V , Source-to-Drain Voltage (V) SD V , Drain-to-Source Voltage (V) DS
Fig. 7
Typical Source-to-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 2018-05-25
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) (A) urrent 10µs (A 100 rain C rent D 100µs 100 T = 175°C n Cur J ai everse T J= 25°C 1ms R , Dr 10 , I D I SD 10ms T = 25°C C T = 175°C V = J GS 0V 10 A Single Pulse 1 A 0.4 0.8 1.2 1.6 2.0 2.4 2.8 1 10 100 V , Source-to-Drain Voltage (V) SD V , Drain-to-Source Voltage (V) DS
Fig. 7
Typical Source-to-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 2018-05-25