Datasheet TCR8BM (Toshiba) - 6
| Fabricante | Toshiba |
| Descripción | Low Dropout (LDO) Linear Voltage Regulator |
| Páginas / Página | 11 / 6 — TCR8BM series. Dropout voltage. ( CIN = 1.0 μF, COUT = 2.2 μF, CBIAS = … |
| Formato / tamaño de archivo | PDF / 722 Kb |
| Idioma del documento | Inglés |
TCR8BM series. Dropout voltage. ( CIN = 1.0 μF, COUT = 2.2 μF, CBIAS = 0.1 μF, Tj = 25°C)
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- TCR8BM085A TCR8BM08A TCR8BM095A TCR8BM09A TCR8BM10 TCR8BM105 TCR8BM105A TCR8BM10A TCR8BM11 TCR8BM115A TCR8BM11A TCR8BM12 TCR8BM125A TCR8BM12A TCR8BM13A TCR8BM14A TCR8BM15A TCR8BM16A TCR8BM17A TCR8BM18A TCR8BM19A TCR8BM20A TCR8BM21A TCR8BM22A TCR8BM23A TCR8BM24A TCR8BM25A TCR8BM26A TCR8BM27A TCR8BM285A TCR8BM28A TCR8BM295A TCR8BM29A TCR8BM30A TCR8BM31A TCR8BM32A TCR8BM33A TCR8BM34A TCR8BM35A TCR8BM36A
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TCR8BM series Dropout voltage ( CIN = 1.0 μF, COUT = 2.2 μF, CBIAS = 0.1 μF, Tj = 25°C)
IOUT = 800 mA Output voltages VBIAS input voltage Unit Min Typ. Max (Note 10) 0.8 V 3.3 V ― 150 210 mV 0.85 V 3.3 V ― 155 215 mV 0.9 V 3.3 V ― 155 220 mV 0.95 V 3.3 V ― 160 225 mV 1.0 V 3.3 V ― 165 230 mV 1.05 V 3.3 V ― 165 240 mV 1.1 V 3.3 V ― 170 245 mV 1.15 V 3.3 V ― 175 255 mV 1.2 V 3.3 V ― 180 260 mV 1.25 V 3.3 V ― 185 275 mV 1.3 V 3.3 V ― 190 285 mV 1.4 V 3.3 V ― 205 320 mV 1.5 V 3.4 V ― 205 315 mV 1.6 V 3.5 V ― 205 310 mV 1.7 V, 1.8 V VOUT + 1.9 V ― 200 305 mV 1.9 V, 2.0 V VOUT + 1.9 V ― 200 300 mV 2.1 V, 2.2 V VOUT + 1.9 V ― 200 295 mV 2.3 V ≤ VOUT ≤ 2.6 V VOUT + 1.9 V ― 195 290 mV 2.7 V ≤ VOUT ≤ 3.6 V VOUT + 1.9 V ― 195 285 mV Note 10: Tj = -40 to 85 °C This parameter is guaranteed by design © 2018-2019 6 2019-01-15 Toshiba Electronic Devices & Storage Corporation
IOUT = 800 mA Output voltages VBIAS input voltage Unit Min Typ. Max (Note 10) 0.8 V 3.3 V ― 150 210 mV 0.85 V 3.3 V ― 155 215 mV 0.9 V 3.3 V ― 155 220 mV 0.95 V 3.3 V ― 160 225 mV 1.0 V 3.3 V ― 165 230 mV 1.05 V 3.3 V ― 165 240 mV 1.1 V 3.3 V ― 170 245 mV 1.15 V 3.3 V ― 175 255 mV 1.2 V 3.3 V ― 180 260 mV 1.25 V 3.3 V ― 185 275 mV 1.3 V 3.3 V ― 190 285 mV 1.4 V 3.3 V ― 205 320 mV 1.5 V 3.4 V ― 205 315 mV 1.6 V 3.5 V ― 205 310 mV 1.7 V, 1.8 V VOUT + 1.9 V ― 200 305 mV 1.9 V, 2.0 V VOUT + 1.9 V ― 200 300 mV 2.1 V, 2.2 V VOUT + 1.9 V ― 200 295 mV 2.3 V ≤ VOUT ≤ 2.6 V VOUT + 1.9 V ― 195 290 mV 2.7 V ≤ VOUT ≤ 3.6 V VOUT + 1.9 V ― 195 285 mV Note 10: Tj = -40 to 85 °C This parameter is guaranteed by design © 2018-2019 6 2019-01-15 Toshiba Electronic Devices & Storage Corporation