Datasheet 2N7000, 2N7002, VQ1000J, VQ1000P, BS170 (Vishay) - 5

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
1.000 6 5 ID = 50 mA TJ = 125_C Ω ) 0.100 4 500 mA 3 TJ = 25_C On-Resistance ( – Source Current (A) 0.010 2 – (on) I S r DS 1 0.001 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 12 14 16 18 20 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.50 ID = 250 mA 0.25 –0.00 ariance (V) V – ) –0.25 h (t GSV –0.50 –0.75 –50 –25 0 25 50 75 100 125 150
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only)
1 Duty Cycle = 0.5 0.2 ransient T 0.1 Notes: 0.05 0.1 PDM fective 0.02 t1 t Thermal Impedance 2 t1 1. Duty Cycle, D = 0.01 t2 2. Per Unit Base = RthJA = 156_C/W Normalized Ef 3. T (t) JM – TA = PDMZthJA Single Pulse 0.01 0.1 1 10 100 1 K 10 K t1 – Square Wave Pulse Duration (sec) Document Number: 70226 www.vishay.com S-04279—Rev. F, 16-Jul-01
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