Datasheet 2N7000, 2N7002, VQ1000J, VQ1000P, BS170 (Vishay) - 3
| Fabricante | Vishay |
| Descripción | N-Channel 60-V (D-S) MOSFET |
| Páginas / Página | 6 / 3 — 2N7000/2N7002, VQ1000J/P, BS170. Vishay Siliconix. Limits. Parameter. … |
| Formato / tamaño de archivo | PDF / 60 Kb |
| Idioma del documento | Inglés |
2N7000/2N7002, VQ1000J/P, BS170. Vishay Siliconix. Limits. Parameter. Symbol. Test Conditions. Typa. Min. Max. Unit. Switchingd. Static
Línea de modelo para esta hoja de datos
Versión de texto del documento
2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix
SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000 2N7002
Parameter Symbol Test Conditions Typa Min Max Min Max Unit Switchingd
Turn-On Time tON VDD = 15 V, R DD = 15 V, L R = 25 L W 7 10 = 25 W Turn-Off Time t I OFF D ^0.5 A, VGEN = 10 V, RG = 25 W 7 10 ns Turn-On Time tON VDD = 30 V, R DD = 30 V, L R = 150 L W 7 20 = 150 W Turn-Off Time t I OFF D ^ 0.2 A, VGEN = 10 V, RG = 25 W 11 20 SPECIFICATIONSĊVQ1000J/P AND BS170 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
VQ1000J/P BS170
Parameter Symbol Test Conditions Typa Min Max Min Max Unit Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA 70 60 60 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 2.1 0.8 2.5 0.8 3 VDS = 0 V, VGS = "10 V "100 Gate-Body Leakage IGSS TJ = 125_C "500 nA GSS VDS = 0 V, VGS = "15 V "10 VDS = 25 V, VGS = 0 V 0.5 Zero Gate Voltage Drain Current IDSS V DSS DS = 48 V, VGS = 0 V, TJ = 125_C 500 mA m VDS = 60 V, VGS = 0 V 10 On-State Drain Currentb ID(on) VDS = 10 V, VGS = 10 V 1 0.5 A VGS = 5 V, ID = 0.2 A 4 7.5 VGS = 10 V, ID = 0.2 A 2.3 5 Drain-Source On-Resistanceb rDS(on) W VGS = 10 V, ID = 0.3 A 2.3 5.5 TJ = 125_C 4.2 7.6 VDS = 10 V, ID = 0.2 A 100 Forward Transconductanceb gfs VDS = 10 V, ID = 0.5 A 100 mS Common Source Output Conductanceb gos VDS =5 V, ID = 0.05 A 0.5
Dynamic
Input Capacitance Ciss 22 60 60 V Output Capacitance C DS =25 V, VGS = 0 V oss 11 25 pF f = 1 MHz Reverse Transfer Capacitance Crss 2 5
Switchingd
Turn-On Time tON VDD = 15 V, R DD = 15 V, L R = 23 L W 7 10 = 23 W Turn-Off Time t I OFF D ^ 0.6 A, VGEN = 10 V, RG = 25 W 7 10 ns Turn-On Time tON VDD = 25 V, R DD = 25 V, L R = 125 L W 7 10 = 125 W Turn-Off Time t I OFF D ^ 0.2 A, VGEN = 10 V, RG = 25 W 7 10 Notes a. For DESIGN AID ONLY, not subject to production testing. VNBF06 b. Pulse test: PW v80 ms duty cycle v1%. c. This parameter not registered with JEDEC. d. Switching time is essentially independent of operating temperature. Document Number: 70226 www.vishay.com S-04279—Rev. F, 16-Jul-01
11-3
Document Outline Datasheet Disclaimer
SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000 2N7002
Parameter Symbol Test Conditions Typa Min Max Min Max Unit Switchingd
Turn-On Time tON VDD = 15 V, R DD = 15 V, L R = 25 L W 7 10 = 25 W Turn-Off Time t I OFF D ^0.5 A, VGEN = 10 V, RG = 25 W 7 10 ns Turn-On Time tON VDD = 30 V, R DD = 30 V, L R = 150 L W 7 20 = 150 W Turn-Off Time t I OFF D ^ 0.2 A, VGEN = 10 V, RG = 25 W 11 20 SPECIFICATIONSĊVQ1000J/P AND BS170 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
VQ1000J/P BS170
Parameter Symbol Test Conditions Typa Min Max Min Max Unit Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA 70 60 60 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 2.1 0.8 2.5 0.8 3 VDS = 0 V, VGS = "10 V "100 Gate-Body Leakage IGSS TJ = 125_C "500 nA GSS VDS = 0 V, VGS = "15 V "10 VDS = 25 V, VGS = 0 V 0.5 Zero Gate Voltage Drain Current IDSS V DSS DS = 48 V, VGS = 0 V, TJ = 125_C 500 mA m VDS = 60 V, VGS = 0 V 10 On-State Drain Currentb ID(on) VDS = 10 V, VGS = 10 V 1 0.5 A VGS = 5 V, ID = 0.2 A 4 7.5 VGS = 10 V, ID = 0.2 A 2.3 5 Drain-Source On-Resistanceb rDS(on) W VGS = 10 V, ID = 0.3 A 2.3 5.5 TJ = 125_C 4.2 7.6 VDS = 10 V, ID = 0.2 A 100 Forward Transconductanceb gfs VDS = 10 V, ID = 0.5 A 100 mS Common Source Output Conductanceb gos VDS =5 V, ID = 0.05 A 0.5
Dynamic
Input Capacitance Ciss 22 60 60 V Output Capacitance C DS =25 V, VGS = 0 V oss 11 25 pF f = 1 MHz Reverse Transfer Capacitance Crss 2 5
Switchingd
Turn-On Time tON VDD = 15 V, R DD = 15 V, L R = 23 L W 7 10 = 23 W Turn-Off Time t I OFF D ^ 0.6 A, VGEN = 10 V, RG = 25 W 7 10 ns Turn-On Time tON VDD = 25 V, R DD = 25 V, L R = 125 L W 7 10 = 125 W Turn-Off Time t I OFF D ^ 0.2 A, VGEN = 10 V, RG = 25 W 7 10 Notes a. For DESIGN AID ONLY, not subject to production testing. VNBF06 b. Pulse test: PW v80 ms duty cycle v1%. c. This parameter not registered with JEDEC. d. Switching time is essentially independent of operating temperature. Document Number: 70226 www.vishay.com S-04279—Rev. F, 16-Jul-01
11-3
Document Outline Datasheet Disclaimer