Datasheet IRF820, SiHF820 (Vishay)
| Fabricante | Vishay |
| Descripción | Power MOSFET |
| Páginas / Página | 9 / 1 — IRF820, SiHF820. Power MOSFET. FEATURES. PRODUCT SUMMARY. RoHS*. … |
| Revisión | C |
| Formato / tamaño de archivo | PDF / 283 Kb |
| Idioma del documento | Inglés |
IRF820, SiHF820. Power MOSFET. FEATURES. PRODUCT SUMMARY. RoHS*. COMPLIANT. DESCRIPTION. TO-220AB. ORDERING INFORMATION
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IRF820, SiHF820
Vishay Siliconix
Power MOSFET FEATURES PRODUCT SUMMARY
• Dynamic dV/dt Rating VDS (V) 500 • Repetitive Avalanche Rated Available RDS(on) () VGS = 10 V 3.0 • Fast Switching
RoHS*
Qg (Max.) (nC) 24
COMPLIANT
• Ease of Paralleling Qgs (nC) 3.3 Q • Simple Drive Requirements gd (nC) 13 Configuration Single • Compliant to RoHS Directive 2002/95/EC D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
TO-220AB
designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-220AB package is universally preferred for commercial-industrial applications at power dissipation S levels to approximately 50 W. The low thermal resistance D G S and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. N-Channel MOSFET
ORDERING INFORMATION
Package TO-220AB IRF820PbF Lead (Pb)-free SiHF820-E3 IRF820 SnPb SiHF820
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 TC = 25 °C 2.5 Continuous Drain Current VGS at 10 V ID TC = 100 °C 1.6 A Pulsed Drain Currenta IDM 8.0 Linear Derating Factor 0.40 W/°C Single Pulse Avalanche Energyb EAS 210 mJ Repetitive Avalanche Currenta IAR 2.5 A Repetitive Avalanche Energya EAR 5.0 mJ Maximum Power Dissipation TC = 25 °C PD 50 W Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 60 mH, Rg = 25 , IAS = 2.5 A (see fig. 12). c. ISD 2.5 A, dI/dt 50 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91059 www.vishay.com S11-0507-Rev. C, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Vishay Siliconix
Power MOSFET FEATURES PRODUCT SUMMARY
• Dynamic dV/dt Rating VDS (V) 500 • Repetitive Avalanche Rated Available RDS(on) () VGS = 10 V 3.0 • Fast Switching
RoHS*
Qg (Max.) (nC) 24
COMPLIANT
• Ease of Paralleling Qgs (nC) 3.3 Q • Simple Drive Requirements gd (nC) 13 Configuration Single • Compliant to RoHS Directive 2002/95/EC D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
TO-220AB
designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-220AB package is universally preferred for commercial-industrial applications at power dissipation S levels to approximately 50 W. The low thermal resistance D G S and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. N-Channel MOSFET
ORDERING INFORMATION
Package TO-220AB IRF820PbF Lead (Pb)-free SiHF820-E3 IRF820 SnPb SiHF820
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 TC = 25 °C 2.5 Continuous Drain Current VGS at 10 V ID TC = 100 °C 1.6 A Pulsed Drain Currenta IDM 8.0 Linear Derating Factor 0.40 W/°C Single Pulse Avalanche Energyb EAS 210 mJ Repetitive Avalanche Currenta IAR 2.5 A Repetitive Avalanche Energya EAR 5.0 mJ Maximum Power Dissipation TC = 25 °C PD 50 W Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 60 mH, Rg = 25 , IAS = 2.5 A (see fig. 12). c. ISD 2.5 A, dI/dt 50 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91059 www.vishay.com S11-0507-Rev. C, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000