Datasheet 4N35, 4N36, 4N37 (Vishay)
| Fabricante | Vishay |
| Descripción | Optocoupler, Phototransistor Output, with Base Connection |
| Páginas / Página | 7 / 1 — 4N35, 4N36, 4N37. Optocoupler, Phototransistor Output, with Base … |
| Revisión | 1.2 |
| Formato / tamaño de archivo | PDF / 133 Kb |
| Idioma del documento | Inglés |
4N35, 4N36, 4N37. Optocoupler, Phototransistor Output, with Base Connection. FEATURES. APPLICATIONS. DESCRIPTION
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4N35, 4N36, 4N37
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection FEATURES
A 1 6 B • Isolation test voltage 5000 VRMS • Interfaces with common logic families C 2 5 C • Input-output coupling capacitance < 0.5 pF • Industry standard dual-in-line 6 pin package NC 3 4 E • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 21842
APPLICATIONS
i179004-5 • AC mains detection • Reed relay driving
DESCRIPTION
• Switch mode power supply feedback Each optocoupler consists of gallium arsenide infrared LED • Telephone ring detection and a silicon NPN phototransistor. • Logic ground isolation
AGENCY APPROVALS
• Logic coupling with high frequency noise rejection • Underwriters laboratory file no. E52744 • BSI: EN 60065:2002, EN 60950:2000 • FIMKO; EN 60065, EN 60335, EN 60950 certificate no. 25156
ORDER INFORMATION PART REMARKS
4N35 CTR > 100 %, DIP-6 4N36 CTR > 100 %, DIP-6 4N37 CTR > 100 %, DIP-6
ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT
Reverse voltage VR 6 V Forward current IF 50 mA Surge current t ≤ 10 μs IFSM 1 A Power dissipation Pdiss 70 mW
OUTPUT
Collector emitter breakdown voltage VCEO 70 V Emitter base breakdown voltage VEBO 7 V IC 50 mA Collector current t ≤ 1 ms IC 100 mA Power dissipation Pdiss 70 mW
COUPLER
Isolation test voltage VISO 5000 VRMS Creepage ≥ 7 mm Clearance ≥ 7 mm Isolation thickness between emitter ≥ 0.4 mm and detector Document Number: 81181 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev. 1.2, 07-Jan-10 153
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection FEATURES
A 1 6 B • Isolation test voltage 5000 VRMS • Interfaces with common logic families C 2 5 C • Input-output coupling capacitance < 0.5 pF • Industry standard dual-in-line 6 pin package NC 3 4 E • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 21842
APPLICATIONS
i179004-5 • AC mains detection • Reed relay driving
DESCRIPTION
• Switch mode power supply feedback Each optocoupler consists of gallium arsenide infrared LED • Telephone ring detection and a silicon NPN phototransistor. • Logic ground isolation
AGENCY APPROVALS
• Logic coupling with high frequency noise rejection • Underwriters laboratory file no. E52744 • BSI: EN 60065:2002, EN 60950:2000 • FIMKO; EN 60065, EN 60335, EN 60950 certificate no. 25156
ORDER INFORMATION PART REMARKS
4N35 CTR > 100 %, DIP-6 4N36 CTR > 100 %, DIP-6 4N37 CTR > 100 %, DIP-6
ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT
Reverse voltage VR 6 V Forward current IF 50 mA Surge current t ≤ 10 μs IFSM 1 A Power dissipation Pdiss 70 mW
OUTPUT
Collector emitter breakdown voltage VCEO 70 V Emitter base breakdown voltage VEBO 7 V IC 50 mA Collector current t ≤ 1 ms IC 100 mA Power dissipation Pdiss 70 mW
COUPLER
Isolation test voltage VISO 5000 VRMS Creepage ≥ 7 mm Clearance ≥ 7 mm Isolation thickness between emitter ≥ 0.4 mm and detector Document Number: 81181 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev. 1.2, 07-Jan-10 153