Datasheet LTC3547 (Analog Devices) - 3
| Fabricante | Analog Devices |
| Descripción | Dual Monolithic 300mA Synchronous Step-Down Regulator |
| Páginas / Página | 16 / 3 — The. ELECTRICAL CHARACTERISTICS. denotes the specifi cations which apply … |
| Formato / tamaño de archivo | PDF / 310 Kb |
| Idioma del documento | Inglés |
The. ELECTRICAL CHARACTERISTICS. denotes the specifi cations which apply over the full operating
Línea de modelo para esta hoja de datos
Versión de texto del documento
LTC3547
The ELECTRICAL CHARACTERISTICS
●
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. VCC = 3.6V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
RDS(ON) Channel 1 (Note 4) Top Switch On-Resistance VIN = 3.6V, ISW = 100mA 0.8 1.05 Ω Bottom Switch On-Resistance VIN = 3.6V, ISW = 100mA 0.75 1.05 Ω Channel 2 (Note 4) Top Switch On-Resistance VIN = 3.6V, ISW = 100mA 0.8 1.05 Ω Bottom Switch On-Resistance VIN = 3.6V, ISW = 100mA 0.75 1.05 Ω ISW(LKG) Switch Leakage Current VIN = 5V, VRUN = 0V 0.01 1 µA tSOFTSTART Soft-Start Time VFB From 10% to 90% Full-Scale 0.450 0.650 0.850 ms VRUN RUN Threshold High ● 0.4 1 1.2 V IRUN RUN Leakage Current ● 0.01 1 µA VBURST Output Ripple in Burst Mode Operation VOUT = 1.5V, COUT = 4.7µF 20 mVP-P
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
The DFN switch on-resistance is guaranteed by correlation to may cause permanent damage to the device. Exposure to any Absolute wafer level measurements. Maximum Rating condition for extended periods may affect device
Note 5:
Guaranteed by long term current density limitations. reliability and lifetime.
Note 6:
This IC includes overtemperature protection that is intended
Note 2:
The LTC3547E is guaranteed to meet specifi ed performance to protect the device during momentary overload conditions. Junction from 0°C to 85°C. Specifi cations over the –40°C and 85°C operating temperature will exceed 125°C when overtemperature protection is active. temperature range are assured by design, characterization and correlation Continuous operation above the specifi ed maximum operating junction with statistical process controls. temperature may impair device reliability.
Note 3:
Dynamic supply current is higher due to the internal gate charge being delivered at the switching frequency.
W U TYPICAL PERFOR A CE CHARACTERISTICS Burst Mode Operation Effi ciency vs Input Voltage Supply Current vs Temperature
100 60 VOUT = 1.8V RUN1 = RUN2 = VIN SW, AC ILOAD = 0A COUPLED 90 55 5V/DIV 50 80 µA) VOUT 50mV/DIV 45 70 VIN = 5.5V 40 IL 60 50mA/DIV 35 EFFICIENCY (%) 50 IOUT = 0.1mA SUPPLY CURRENT ( V I 30 IN = 2.7V OUT = 1mA 3547 G01 I 2.5µs/DIV 40 OUT = 10mA I 25 V OUT = 100mA IN = 3.6V I V OUT = 300mA OUT = 1.8V 30 20 ILOAD = 20mA 2.5 3 3.5 4 4.5 5 5.5 –50 –25 0 25 50 75 100 VIN (V) TEMPERATURE (ºC) 3547 G02 3547 G03 3547fa 3
The ELECTRICAL CHARACTERISTICS
●
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. VCC = 3.6V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
RDS(ON) Channel 1 (Note 4) Top Switch On-Resistance VIN = 3.6V, ISW = 100mA 0.8 1.05 Ω Bottom Switch On-Resistance VIN = 3.6V, ISW = 100mA 0.75 1.05 Ω Channel 2 (Note 4) Top Switch On-Resistance VIN = 3.6V, ISW = 100mA 0.8 1.05 Ω Bottom Switch On-Resistance VIN = 3.6V, ISW = 100mA 0.75 1.05 Ω ISW(LKG) Switch Leakage Current VIN = 5V, VRUN = 0V 0.01 1 µA tSOFTSTART Soft-Start Time VFB From 10% to 90% Full-Scale 0.450 0.650 0.850 ms VRUN RUN Threshold High ● 0.4 1 1.2 V IRUN RUN Leakage Current ● 0.01 1 µA VBURST Output Ripple in Burst Mode Operation VOUT = 1.5V, COUT = 4.7µF 20 mVP-P
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
The DFN switch on-resistance is guaranteed by correlation to may cause permanent damage to the device. Exposure to any Absolute wafer level measurements. Maximum Rating condition for extended periods may affect device
Note 5:
Guaranteed by long term current density limitations. reliability and lifetime.
Note 6:
This IC includes overtemperature protection that is intended
Note 2:
The LTC3547E is guaranteed to meet specifi ed performance to protect the device during momentary overload conditions. Junction from 0°C to 85°C. Specifi cations over the –40°C and 85°C operating temperature will exceed 125°C when overtemperature protection is active. temperature range are assured by design, characterization and correlation Continuous operation above the specifi ed maximum operating junction with statistical process controls. temperature may impair device reliability.
Note 3:
Dynamic supply current is higher due to the internal gate charge being delivered at the switching frequency.
W U TYPICAL PERFOR A CE CHARACTERISTICS Burst Mode Operation Effi ciency vs Input Voltage Supply Current vs Temperature
100 60 VOUT = 1.8V RUN1 = RUN2 = VIN SW, AC ILOAD = 0A COUPLED 90 55 5V/DIV 50 80 µA) VOUT 50mV/DIV 45 70 VIN = 5.5V 40 IL 60 50mA/DIV 35 EFFICIENCY (%) 50 IOUT = 0.1mA SUPPLY CURRENT ( V I 30 IN = 2.7V OUT = 1mA 3547 G01 I 2.5µs/DIV 40 OUT = 10mA I 25 V OUT = 100mA IN = 3.6V I V OUT = 300mA OUT = 1.8V 30 20 ILOAD = 20mA 2.5 3 3.5 4 4.5 5 5.5 –50 –25 0 25 50 75 100 VIN (V) TEMPERATURE (ºC) 3547 G02 3547 G03 3547fa 3