Datasheet LTC3549 (Analog Devices) - 3
| Fabricante | Analog Devices |
| Descripción | 250mA Low VIN Buck Regulator in 2mm × 3mm DFN |
| Páginas / Página | 16 / 3 — The. ELECTRICAL CHARACTERISTICS. denotes the specifi cations which apply … |
| Formato / tamaño de archivo | PDF / 370 Kb |
| Idioma del documento | Inglés |
The. ELECTRICAL CHARACTERISTICS. denotes the specifi cations which apply over the full operating
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LTC3549
The ELECTRICAL CHARACTERISTICS
●
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C, VIN = 2.2V. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
IS Input DC Bias Current (Note 5) Active Mode VOUT = 90%, ILOAD = 0A 300 475 µA Sleep Mode VOUT = 103%, ILOAD = 0A 50 95 µA Shutdown VRUN = 0V, VIN = 5.5V 0.1 5 µA fOSC Nominal Oscillator Frequency ● 1.8 2.25 2.7 MHz tSS Soft-Start Period RUN↑ 1 ms RPFET RDS(ON) of P-Channel FET ISW = 100mA, Wafer Level 0.5 Ω ISW = 100mA, DD Package (Note 7) 0.56 Ω RNFET RDS(ON) of N-Channel FET ISW = 100mA, Wafer Level 0.35 Ω ISW = 100mA, DD Package (Note 7) 0.4 Ω ILSW SW Leakage VRUN = 0V, VSW = 0V or 5.5V, VIN = 5.5V ±0.1 ±1 µA
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings becomes active at a junction temperature greater than the maximum may cause permanent damage to the device. Exposure to any Absolute operating junction temperature. Continuous operation above the specifi ed Maximum Rating condition for extended periods may affect device maximum operating junction temperature may impair device reliability. reliability and lifetime. Voltage on any pin may not exceed 6V.
Note 4:
The LTC3549 is tested in a proprietary test mode that connects VFB
Note 2:
The LTC3549E is guaranteed to meet performance specifi cations to the output of the error amplifi er. from 0°C to 85°C. Specifi cations over the –40°C to 85°C operating
Note 5:
Dynamic supply current is higher due to the gate charge being temperature range are assured by design, characterization and correlation delivered at the switching frequency. with statistical process controls.
Note 6:
ΔVOVL is the amount VFB must exceed the regulated feedback
Note 3:
TJ is calculated from the ambient temperature TA and power voltage. dissipation PD according to the following formula:
Note 7:
Determined by design, not production tested. LTC3549: TJ = TA + (PD)(64°C/W) This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. Overtemperature protection 3549f 3
The ELECTRICAL CHARACTERISTICS
●
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C, VIN = 2.2V. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
IS Input DC Bias Current (Note 5) Active Mode VOUT = 90%, ILOAD = 0A 300 475 µA Sleep Mode VOUT = 103%, ILOAD = 0A 50 95 µA Shutdown VRUN = 0V, VIN = 5.5V 0.1 5 µA fOSC Nominal Oscillator Frequency ● 1.8 2.25 2.7 MHz tSS Soft-Start Period RUN↑ 1 ms RPFET RDS(ON) of P-Channel FET ISW = 100mA, Wafer Level 0.5 Ω ISW = 100mA, DD Package (Note 7) 0.56 Ω RNFET RDS(ON) of N-Channel FET ISW = 100mA, Wafer Level 0.35 Ω ISW = 100mA, DD Package (Note 7) 0.4 Ω ILSW SW Leakage VRUN = 0V, VSW = 0V or 5.5V, VIN = 5.5V ±0.1 ±1 µA
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings becomes active at a junction temperature greater than the maximum may cause permanent damage to the device. Exposure to any Absolute operating junction temperature. Continuous operation above the specifi ed Maximum Rating condition for extended periods may affect device maximum operating junction temperature may impair device reliability. reliability and lifetime. Voltage on any pin may not exceed 6V.
Note 4:
The LTC3549 is tested in a proprietary test mode that connects VFB
Note 2:
The LTC3549E is guaranteed to meet performance specifi cations to the output of the error amplifi er. from 0°C to 85°C. Specifi cations over the –40°C to 85°C operating
Note 5:
Dynamic supply current is higher due to the gate charge being temperature range are assured by design, characterization and correlation delivered at the switching frequency. with statistical process controls.
Note 6:
ΔVOVL is the amount VFB must exceed the regulated feedback
Note 3:
TJ is calculated from the ambient temperature TA and power voltage. dissipation PD according to the following formula:
Note 7:
Determined by design, not production tested. LTC3549: TJ = TA + (PD)(64°C/W) This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. Overtemperature protection 3549f 3