Datasheet RH1499M (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | 10MHz, 6V/µs, Quad Rail-to-Rail Input and Output Precision C-Load Op Amp |
| Páginas / Página | 8 / 4 — TABLE 2: ELECTRICAL CHARACTERISTICS. (Preirradiation) VS = 5V; VCM = VOUT … |
| Formato / tamaño de archivo | PDF / 181 Kb |
| Idioma del documento | Inglés |
TABLE 2: ELECTRICAL CHARACTERISTICS. (Preirradiation) VS = 5V; VCM = VOUT = half supply, unless otherwise noted. TA = 25°C
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RH1499M
TABLE 2: ELECTRICAL CHARACTERISTICS (Preirradiation) VS = 5V; VCM = VOUT = half supply, unless otherwise noted. TA = 25°C SUB- –55°C ≤ TA ≤ 125°C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
IOS Input Offset Current VCM = V+, V– 5 65 nA VCM = V+ – 0.5V, V– + 0.5V 1 15 300 2, 3 nA Input Voltage Range V– V+ V– + 0.5V V+ – 0.5V V Input Noise Voltage 0.1Hz to 10Hz 400 nVP-P en Input Noise Voltage Density f = 1kHz 12 nV/√Hz in Input Noise Current Density f = 1kHz 0.3 pA/√Hz CIN Input Capacitance 5 pF AVOL Large-Signal Voltage Gain VS = 5V, VO = 75mV to 4.8V, 600 3800 4 60 210 5, 6 V/mV RL = 10k CMRR Common Mode Rejection VS = 5V, VCM = V+ to V– 76 90 dB Ratio VS = 5V, VCM = 0.5V to 4.5V 68 85 dB CMRR Match VS = 5V, VCM = V+ to V– 75 91 dB (Channel-to-Channel) VS = 5V, VCM = 0.5V to 4.5V 3 66 dB (Note 3) PSRR Power Supply Rejection VS = 4.5V to 12V, 88 105 1 86 104 2, 3 dB Ratio VCM = VO = 0.5V PSRR Match VS = 4.5V to 12V, 3 82 120 80 118 dB (Channel-to-Channel) VCM = VO = 0.5V (Note 3) VOL Output Voltage Swing No Load 14 30 25 75 mV (Low) (Note 4) ISINK = 1mA 4 50 100 4 65 150 5, 6 mV ISINK = 2.5mA 90 200 110 220 mV VOH Output Voltage Swing No Load 2.5 10 5 25 mV (High) (Note 4) ISOURCE = 1mA 4 70 150 4 100 250 5, 6 mV ISOURCE = 2.5mA 140 250 180 300 mV ISC Short-Circuit Current VS = 5V ±12.5 24 1 ±5 ±10 2, 3 mA IS Supply Current per Amp 1.7 2.2 1 2 2.7 2, 3 mA GBW Gain-Bandwidth Product VS = 5V, f = 100kHz 6.8 10.5 5.8 8.5 MHz SR Slew Rate VS = ±2.5V, AV = –1, 2.6 4.5 4 2 3.6 5, 6 V/µs RL = 10k,VO = ±2V, Measure at VO = ±1V
TABLE 2A: ELECTRICAL CHARACTERISTICS (Postirradiation) VS = 5V; VCM = half supply, TA = 25°C, unless otherwise noted. 10Krad (Si) 20Krad (Si) 50Krad (Si) 100Krad (Si) 200Krad (Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage VCM = V+, V– 950 950 950 950 950 µV IB Input Bias Current VCM = V+, V– 700 750 800 850 900 nA IOS Input Offset Current VCM = V+, V– 65 65 65 65 65 nA Input Voltage Range V– V+ V– V+ V– V+ V– V+ V– V+ V AVOL Large-Signal Voltage VO = 75mV to V+ – 0.2V 300 300 300 300 300 V/mV Gain RL = 10k CMRR Common Mode VCM = V+ to V– 70 70 70 70 70 dB Rejection Ratio rh1499mfg 4 For more information www.linear.com/RH1499M Document Outline Description Absolute Maximum Ratings Burn-In Circuit Package Information Table 1: Electrical Characteristics Table 1A: Electrical Characteristics Table 2: Electrical Characteristics Table 2A: Electrical Characteristics Table 2: Electrical Test Requirements Total Dose Bias Circuit Typical Performance Characteristics
TABLE 2: ELECTRICAL CHARACTERISTICS (Preirradiation) VS = 5V; VCM = VOUT = half supply, unless otherwise noted. TA = 25°C SUB- –55°C ≤ TA ≤ 125°C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
IOS Input Offset Current VCM = V+, V– 5 65 nA VCM = V+ – 0.5V, V– + 0.5V 1 15 300 2, 3 nA Input Voltage Range V– V+ V– + 0.5V V+ – 0.5V V Input Noise Voltage 0.1Hz to 10Hz 400 nVP-P en Input Noise Voltage Density f = 1kHz 12 nV/√Hz in Input Noise Current Density f = 1kHz 0.3 pA/√Hz CIN Input Capacitance 5 pF AVOL Large-Signal Voltage Gain VS = 5V, VO = 75mV to 4.8V, 600 3800 4 60 210 5, 6 V/mV RL = 10k CMRR Common Mode Rejection VS = 5V, VCM = V+ to V– 76 90 dB Ratio VS = 5V, VCM = 0.5V to 4.5V 68 85 dB CMRR Match VS = 5V, VCM = V+ to V– 75 91 dB (Channel-to-Channel) VS = 5V, VCM = 0.5V to 4.5V 3 66 dB (Note 3) PSRR Power Supply Rejection VS = 4.5V to 12V, 88 105 1 86 104 2, 3 dB Ratio VCM = VO = 0.5V PSRR Match VS = 4.5V to 12V, 3 82 120 80 118 dB (Channel-to-Channel) VCM = VO = 0.5V (Note 3) VOL Output Voltage Swing No Load 14 30 25 75 mV (Low) (Note 4) ISINK = 1mA 4 50 100 4 65 150 5, 6 mV ISINK = 2.5mA 90 200 110 220 mV VOH Output Voltage Swing No Load 2.5 10 5 25 mV (High) (Note 4) ISOURCE = 1mA 4 70 150 4 100 250 5, 6 mV ISOURCE = 2.5mA 140 250 180 300 mV ISC Short-Circuit Current VS = 5V ±12.5 24 1 ±5 ±10 2, 3 mA IS Supply Current per Amp 1.7 2.2 1 2 2.7 2, 3 mA GBW Gain-Bandwidth Product VS = 5V, f = 100kHz 6.8 10.5 5.8 8.5 MHz SR Slew Rate VS = ±2.5V, AV = –1, 2.6 4.5 4 2 3.6 5, 6 V/µs RL = 10k,VO = ±2V, Measure at VO = ±1V
TABLE 2A: ELECTRICAL CHARACTERISTICS (Postirradiation) VS = 5V; VCM = half supply, TA = 25°C, unless otherwise noted. 10Krad (Si) 20Krad (Si) 50Krad (Si) 100Krad (Si) 200Krad (Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage VCM = V+, V– 950 950 950 950 950 µV IB Input Bias Current VCM = V+, V– 700 750 800 850 900 nA IOS Input Offset Current VCM = V+, V– 65 65 65 65 65 nA Input Voltage Range V– V+ V– V+ V– V+ V– V+ V– V+ V AVOL Large-Signal Voltage VO = 75mV to V+ – 0.2V 300 300 300 300 300 V/mV Gain RL = 10k CMRR Common Mode VCM = V+ to V– 70 70 70 70 70 dB Rejection Ratio rh1499mfg 4 For more information www.linear.com/RH1499M Document Outline Description Absolute Maximum Ratings Burn-In Circuit Package Information Table 1: Electrical Characteristics Table 1A: Electrical Characteristics Table 2: Electrical Characteristics Table 2A: Electrical Characteristics Table 2: Electrical Test Requirements Total Dose Bias Circuit Typical Performance Characteristics