Datasheet LT1222 (Analog Devices) - 2
| Fabricante | Analog Devices |
| Descripción | 500MHz, 3nV/√Hz, AV ≥ 10 Operational Amplifier |
| Páginas / Página | 12 / 2 — ABSOLUTE. AXI U. R TI GS (Note 1). (OBSOLETE) ... (OBSOLETE) .. … |
| Formato / tamaño de archivo | PDF / 262 Kb |
| Idioma del documento | Inglés |
ABSOLUTE. AXI U. R TI GS (Note 1). (OBSOLETE) ... (OBSOLETE) .. PACKAGE/ORDER I FOR ATIO. OBSOLETE PACKAGE
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LT1222
W W W U ABSOLUTE AXI U A R TI GS (Note 1)
Total Supply Voltage (V + to V –) ... 36V Operating Temperature Range Differential Input Voltage .. ±6V LT1222C ... – 40°C TO 85°C Input Voltage .. ±VS LT1222I ...–40°C to 85°C Output Short-Circuit Duration (Note 2) ... Indefinite LT1222M
(OBSOLETE) ...
– 55°C to 125°C Specified Temperature Range Maximum Junction Temperature (See Below) LT1222C (Note 3) ... 0°C to 70°C Plastic Package ... 150°C LT1222I ...–40°C to 85°C Ceramic Package
(OBSOLETE) ..
175°C LT1222M
(OBSOLETE) ...
– 55°C to 125°C Storage Temperature Range .. – 65°C to 150°C Lead Temperature (Soldering, 10 sec)... 300°C
U W U PACKAGE/ORDER I FOR ATIO
TOP VIEW ORDER PART ORDER PART TOP VIEW NUMBER NUMBER NULL 1 8 NULL NULL 8 –IN 2 7 V+ LT1222CN8 NULL 1 7 V+ SPECIAL +IN 3 6 VOUT LT1222CS8 ORDER –IN 2 6 V V – 4 5 COMP OUT LT1222IS8 CONSULT S8 PART MARKING 3 5 N8 PACKAGE S8 PACKAGE +IN COMP FACTORY 4 8-LEAD PLASTIC DIP 8-LEAD PLASTIC SOIC 1222 T V – JMAX = 150°C, θJA = 130°C/ W (N) T 1222I JMAX = 150°C, θJA = 190°C/ W (S) H PACKAGE 8-LEAD TO-5 METAL CAN J8 PACKAGE 8-LEAD CERAMIC DIP ORDER PART TJMAX = 175°C, θJA = 150°C/W T NUMBER JMAX = 175°C, θJA = 100°C/ W (J) LT1222MJ8
OBSOLETE PACKAGE OBSOLETE PACKAGE
Consider the N8 or S8 Packages for Alternate Source Consider the N8 or S8 Packages for Alternate Source Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS TA = 25
°
C, VS =
±
15V, VCM = 0V, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage (Note 4) 100 300 μV IOS Input Offset Current 100 300 nA IB Input Bias Current 100 300 nA en Input Noise Voltage f = 10kHz 3 nV/√Hz in Input Noise Current f = 10kHz 2 pA/√Hz RIN Input Resistance VCM = ±12V 20 45 MΩ Differential 12 kΩ CIN Input Capacitance 2 pF Input Voltage Range (Positive) 12 14 V Input Voltage Range (Negative) – 13 – 12 V CMRR Common Mode Rejection Ratio VCM = ±12V 100 120 dB PSRR Power Supply Rejection Ratio VS = ±5V to ±15V 98 110 dB AVOL Large-Signal Voltage Gain VOUT = ±10V, RL = 500Ω 100 200 V/mV VOUT Output Swing RL = 500Ω 12 13 ±V IOUT Output Current VOUT = ±12V 24 26 mA SR Slew Rate (Note 5) 150 200 V/μs Full Power Bandwidth 10V Peak (Note 6) 3.2 MHz GBW Gain-Bandwidth f = 1MHz 500 MHz 1222fc 2
W W W U ABSOLUTE AXI U A R TI GS (Note 1)
Total Supply Voltage (V + to V –) ... 36V Operating Temperature Range Differential Input Voltage .. ±6V LT1222C ... – 40°C TO 85°C Input Voltage .. ±VS LT1222I ...–40°C to 85°C Output Short-Circuit Duration (Note 2) ... Indefinite LT1222M
(OBSOLETE) ...
– 55°C to 125°C Specified Temperature Range Maximum Junction Temperature (See Below) LT1222C (Note 3) ... 0°C to 70°C Plastic Package ... 150°C LT1222I ...–40°C to 85°C Ceramic Package
(OBSOLETE) ..
175°C LT1222M
(OBSOLETE) ...
– 55°C to 125°C Storage Temperature Range .. – 65°C to 150°C Lead Temperature (Soldering, 10 sec)... 300°C
U W U PACKAGE/ORDER I FOR ATIO
TOP VIEW ORDER PART ORDER PART TOP VIEW NUMBER NUMBER NULL 1 8 NULL NULL 8 –IN 2 7 V+ LT1222CN8 NULL 1 7 V+ SPECIAL +IN 3 6 VOUT LT1222CS8 ORDER –IN 2 6 V V – 4 5 COMP OUT LT1222IS8 CONSULT S8 PART MARKING 3 5 N8 PACKAGE S8 PACKAGE +IN COMP FACTORY 4 8-LEAD PLASTIC DIP 8-LEAD PLASTIC SOIC 1222 T V – JMAX = 150°C, θJA = 130°C/ W (N) T 1222I JMAX = 150°C, θJA = 190°C/ W (S) H PACKAGE 8-LEAD TO-5 METAL CAN J8 PACKAGE 8-LEAD CERAMIC DIP ORDER PART TJMAX = 175°C, θJA = 150°C/W T NUMBER JMAX = 175°C, θJA = 100°C/ W (J) LT1222MJ8
OBSOLETE PACKAGE OBSOLETE PACKAGE
Consider the N8 or S8 Packages for Alternate Source Consider the N8 or S8 Packages for Alternate Source Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS TA = 25
°
C, VS =
±
15V, VCM = 0V, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage (Note 4) 100 300 μV IOS Input Offset Current 100 300 nA IB Input Bias Current 100 300 nA en Input Noise Voltage f = 10kHz 3 nV/√Hz in Input Noise Current f = 10kHz 2 pA/√Hz RIN Input Resistance VCM = ±12V 20 45 MΩ Differential 12 kΩ CIN Input Capacitance 2 pF Input Voltage Range (Positive) 12 14 V Input Voltage Range (Negative) – 13 – 12 V CMRR Common Mode Rejection Ratio VCM = ±12V 100 120 dB PSRR Power Supply Rejection Ratio VS = ±5V to ±15V 98 110 dB AVOL Large-Signal Voltage Gain VOUT = ±10V, RL = 500Ω 100 200 V/mV VOUT Output Swing RL = 500Ω 12 13 ±V IOUT Output Current VOUT = ±12V 24 26 mA SR Slew Rate (Note 5) 150 200 V/μs Full Power Bandwidth 10V Peak (Note 6) 3.2 MHz GBW Gain-Bandwidth f = 1MHz 500 MHz 1222fc 2