Datasheet LT1189 (Analog Devices) - 4

LT1189
– +5V ELECTRICAL CHAR C A TERISTICS 0
°
C
≤
TA
≤
70
°
C, (Note 3) VS =
±
5V, VREF = 0V, RFB1 = 900
Ω
from pins 6 to 8, RFB2 = 100
Ω
from pin 8 to ground, RL = RFB1 + RFB2 = 1k, CL
≤
10pF, pin 5 open. LT1189C SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage Either Input 1.0 3.0 mV (Note 4) SOIC Package 1.0 6.0 mV ∆VOS /∆T Input VOS Drift 5.0 µV/°C IOS Input Offset Current Either Input 0.2 1.5 µA IB Input Bias Current Either Input ±0.5 ±3.5 µA Input Voltage Range –2.5 3.5 V CMRR Common-Mode Rejection Ratio VCM = – 2.5V to 3.5V 80 105 dB PSRR Power Supply Rejection Ratio VS = ±2.375V to ±8V 70 90 dB VOUT Output Voltage Swing VS = ±5V, RL = 1k, AV = 50 ±3.7 ±4.0 V VS = ±8V, RL = 1k, AV = 50 ±6.6 ±7.0 VS = ±8V, RL = 300Ω, AV = 50, (Note 3) ±6.4 ±6.6 GE Gain Error VO = ±1V, AV = 10, RL = 1k 1.0 3.5 % IS Supply Current 13 17 mA Shutdown Supply Current Pin 5 at V–, (Note 11) 0.8 1.5 mA IS/D Shutdown Pin Current Pin 5 at V– 5 25 µA
5V ELECTRICAL CHAR C A TERISTICS 0
°
C
≤
TA
≤
70
°
C, (Note 3) V + – S = +5V, VS = 0V, VREF = 2.5V, RFB1 = 900
Ω
from pins 6 to 8, RFB2 = 100
Ω
from pin 8 to VREF, RL = RFB1 + RFB2 = 1k, CL
≤
10pF, pin 5 open. LT1189C SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage, (Note 4) Either Input 1.0 3.0 mV ∆VOS/∆T Input VOS Drift 5.0 µV/°C IOS Input Offset Current Either Input 0.2 1.5 µA IB Input Bias Current Either Input ±0.5 ±3.5 µA Input Voltage Range 2.0 3.5 V CMRR Common-Mode Rejection Ratio VCM = 2.0V to 3.5V 80 100 dB VOUT Output Voltage Swing RL = 300Ω to Ground VOUT High 3.5 4.0 V (Note 3) VOUT Low 0.15 0.4 IS Supply Current 12 16 mA Shutdown Supply Current Pin 5 at V, (Note 11) 0.8 1.5 mA IS/D Shutdown Pin Current Pin 5 at V– 5 25 µA
Note 1
: A heat sink may be required to keep the junction temperature below
Note 6
: Slew rate is measured between ±1V on the output, with a VIN step of absolute maximum when the output is shorted continuously. ±0.5V, AV = 10 and RL = 1k.
Note 2
: TJ is calculated from the ambient temperature TA and power dissipation
Note 7
: Full power bandwidth is calculated from the slew rate measurement: PD according to the following formulas: FPBW = SR/2πVp. LT1189MJ8, LT1189CJ8: TJ = TA + (PD × 100°C/W)
Note 8
: Settling time measurement techniques are shown in “Take the LT1189CN8: TJ = TA + (PD × 100°C/W) Guesswork Out of Settling Time Measurements,” EDN, September 19, 1985. LT1189CS8: TJ = TA + (PD × 150°C/W)
Note 9
: NTSC (3.58MHz).
Note 3
: When RL = 1k is specified, the load resistor is RFB1 + RFB2, but when
Note 10
: AC parameters are 100% tested on the ceramic and plastic DIP RL = 300Ω is specified, then an additional 430Ω is added to the output such packaged parts (J8 and N8 suffix) and are sample tested on every lot of the SO that (RFB1 + RFB2) in parallel with 430Ω is RL = 300Ω. packaged parts (S8 suffix).
Note 4
: VOS measured at the output (pin 6) is the contribution from both input
Note 11
: See Application section for shutdown at elevated temperatures. Do pair, and is input referred. not operate shutdown above TJ > 125°C.
Note 5
: VIN LIM is the maximum voltage between –VIN and +VIN (pin 2 and pin 3) for which the output can respond. 4