Datasheet ADuM3190S (Analog Devices) - 3
| Fabricante | Analog Devices |
| Descripción | Aerospace High Stability Isolated Error Amplifier |
| Páginas / Página | 14 / 3 — 4.0 Specifications |
| Revisión | C |
| Formato / tamaño de archivo | PDF / 1.1 Mb |
| Idioma del documento | Inglés |
4.0 Specifications
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4.0 Specifications
4.1. Absolute Maximum Ratings 1/ Supply voltage (VDD1, VDD2) ... 24 V 2/ Supply voltage (VREG1, VREG2) .. 3.6 V 2/ Input voltage (+IN, -IN) .. 3.6 V 8/ Output voltages ( ).. 3.6 V Output voltages ( )... 5.8 V Output Current per Output Pin... -11 mA to +11 mA 8/ Common-Mode Transients .. -100kV/µs – 100kV/µs 3/ Storage temperature range ... -65C to +150C Junction temperature maximum (TJ) .. +150C Lead temperature (soldering, 60 seconds) .. +300C Thermal resistance, junction-to-case (JC) ... 60 C/W 4/ Thermal resistance, junction-to-ambient (JA) .. 98 C/W 4/ ESD Sensitivity (HBM)……………………………………………….. Class 2 4.2. Recommended Operating Conditions Supply voltage (VDD1, VDD2) ... 3.0 V to 20.0 V Ambient operating temperature range (TA)…………………………. -55C to +125C Max input signal rise and fall times (tR, tF) ... 1ms 4.3. Nominal Operating Performance Characteristics 5/ Input Capacitance .. 2 pF EAOUT Impedance ( ... High-Z Input-to-Output Capacitance (CI-O) .. 2.2pF 7/ Input Capacitance (CI)... 4pF Maximum Working Insulation Voltage ..100Vpeak 9/ 4.4. Radiation Features Maximum total dose available (dose rate = 50 – 300 rads(Si)/s)….30 k rads(Si) 1/ Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions outside of those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. 2/ All voltages are relative to their respective grounds. 3/ Refers to common-mode transients across the insulation barrier. Common-mode transients exceeding the absolute maximum ratings may cause latch-up or permanent damage 4/ Measurement taken under absolute worst case condition and represents data taken with thermal camera for highest power density location. See MIL-STD- 1835 for average ΘJC number. 5/ All typical specifications are at TA = 25°C and VDD1 = VDD2 = 5 V, unless otherwise noted. 6/ The device is considered a 2-terminal device; Pin 1 through Pin 8 are shorted together, and Pin 9 through Pin 16 are shorted together 7/ Input capacitance is from any input data pin to ground. 8/ See Figure 2 for maximum rated power for various temperatures. 9/ Maximum voltage magnitude imposed across the isolation barrier. Long term operation at this high voltage can lead to shortened isolation life. Continuous working voltage exceeding the rated value may cause permanent damage. 10/ Accelerated life testing using voltage levels higher than the rated continuous working voltage is on going for this part. Expected completion is end of 2018.
4.1. Absolute Maximum Ratings 1/ Supply voltage (VDD1, VDD2) ... 24 V 2/ Supply voltage (VREG1, VREG2) .. 3.6 V 2/ Input voltage (+IN, -IN) .. 3.6 V 8/ Output voltages ( ).. 3.6 V Output voltages ( )... 5.8 V Output Current per Output Pin... -11 mA to +11 mA 8/ Common-Mode Transients .. -100kV/µs – 100kV/µs 3/ Storage temperature range ... -65C to +150C Junction temperature maximum (TJ) .. +150C Lead temperature (soldering, 60 seconds) .. +300C Thermal resistance, junction-to-case (JC) ... 60 C/W 4/ Thermal resistance, junction-to-ambient (JA) .. 98 C/W 4/ ESD Sensitivity (HBM)……………………………………………….. Class 2 4.2. Recommended Operating Conditions Supply voltage (VDD1, VDD2) ... 3.0 V to 20.0 V Ambient operating temperature range (TA)…………………………. -55C to +125C Max input signal rise and fall times (tR, tF) ... 1ms 4.3. Nominal Operating Performance Characteristics 5/ Input Capacitance .. 2 pF EAOUT Impedance ( ... High-Z Input-to-Output Capacitance (CI-O) .. 2.2pF 7/ Input Capacitance (CI)... 4pF Maximum Working Insulation Voltage ..100Vpeak 9/ 4.4. Radiation Features Maximum total dose available (dose rate = 50 – 300 rads(Si)/s)….30 k rads(Si) 1/ Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions outside of those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. 2/ All voltages are relative to their respective grounds. 3/ Refers to common-mode transients across the insulation barrier. Common-mode transients exceeding the absolute maximum ratings may cause latch-up or permanent damage 4/ Measurement taken under absolute worst case condition and represents data taken with thermal camera for highest power density location. See MIL-STD- 1835 for average ΘJC number. 5/ All typical specifications are at TA = 25°C and VDD1 = VDD2 = 5 V, unless otherwise noted. 6/ The device is considered a 2-terminal device; Pin 1 through Pin 8 are shorted together, and Pin 9 through Pin 16 are shorted together 7/ Input capacitance is from any input data pin to ground. 8/ See Figure 2 for maximum rated power for various temperatures. 9/ Maximum voltage magnitude imposed across the isolation barrier. Long term operation at this high voltage can lead to shortened isolation life. Continuous working voltage exceeding the rated value may cause permanent damage. 10/ Accelerated life testing using voltage levels higher than the rated continuous working voltage is on going for this part. Expected completion is end of 2018.