Datasheet LT1920 (Analog Devices) - 2
| Fabricante | Analog Devices |
| Descripción | Single Resistor Gain Programmable, Precision Instrumentation Amplifier |
| Páginas / Página | 12 / 2 — ABSOLUTE MAXIMUM RATINGS. PACKAGE/ORDER INFORMATION. (Note 1). ELECTRICAL … |
| Formato / tamaño de archivo | PDF / 308 Kb |
| Idioma del documento | Inglés |
ABSOLUTE MAXIMUM RATINGS. PACKAGE/ORDER INFORMATION. (Note 1). ELECTRICAL CHARACTERISTICS VS =. 15V, VCM = 0V, TA = 25
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LT1920
W W W U U W U ABSOLUTE MAXIMUM RATINGS PACKAGE/ORDER INFORMATION (Note 1)
ORDER PART TOP VIEW Supply Voltage .. ±20V NUMBER Differential Input Voltage (Within the R 1 G 8 RG Supply Voltage) ... ±40V –IN – +V LT1920CN8 2 7 S Input Voltage (Equal to Supply Voltage) .. ±20V +IN 3 + 6 OUTPUT LT1920CS8 Input Current (Note 3) .. ±20mA –V 4 S 5 REF LT1920IN8 Output Short-Circuit Duration .. Indefinite LT1920IS8 N8 PACKAGE 8-LEAD PDIP Operating Temperature Range .. – 40°C to 85°C S8 PACKAGE Specified Temperature Range 8-LEAD PLASTIC SO S8 PART MARKING LT1920C (Note 4) .. 0°C to 70°C TJMAX = 150°C, θJA = 130°C/ W (N8) 1920 LT1920I .. – 40 T °C to 85°C JMAX = 150°C, θJA = 190°C/ W (S8) 1920I Storage Temperature Range ... – 65°C to 150°C Lead Temperature (Soldering, 10 sec).. 300°C Consult factory for Military grade parts.
ELECTRICAL CHARACTERISTICS VS =
±
15V, VCM = 0V, TA = 25
°
C, RL = 2k, unless otherwise noted. SYMBOL PARAMETER CONDITIONS (Note 6) MIN TYP MAX UNITS
G Gain Range G = 1 + (49.4k/RG) 1 10k Gain Error G = 1 0.008 0.1 % G = 10 (Note 2) 0.010 0.3 % G = 100 (Note 2) 0.025 0.3 % G = 1000 (Note 2) 0.040 0.35 % G/T Gain vs Temperature G < 1000 (Note 2) ● 20 50 ppm/°C Gain Nonlinearity (Note 5) VO = ±10V, G = 1 10 ppm VO = ±10V, G = 10 and 100 10 30 ppm VO = ±10V, G = 100 and 1000 20 ppm VOST Total Input Referred Offset Voltage VOST = VOSI + VOSO/G VOSI Input Offset Voltage G = 1000, VS = ±5V to ±15V 30 125 µV G = 1000, VS = ±5V to ±15V ● 185 µV VOSI/T Input Offset Drift (RTI) (Note 3) ● 1 µV/°C VOSO Output Offset Voltage G = 1, VS = ±5V to ±15V 400 1000 µV G = 1, VS = ±5V to ±15V ● 1500 µV VOSO/T Output Offset Drift (Note 3) ● 5 15 µV/°C IOS Input Offset Current 0.3 1 nA IB Input Bias Current 0.5 2 nA en Input Noise Voltage, RTI 0.1Hz to 10Hz, G = 1 2.00 µVP-P 0.1Hz to 10Hz, G = 10 0.50 µVP-P 0.1Hz to 10Hz, G = 100 and 1000 0.28 µVP-P Total RTI Noise = √e 2 ni + (eno/G)2 eni Input Noise Voltage Density, RTI fO = 1kHz 7.5 nV/√Hz eno Output Noise Voltage Density, RTI fO = 1kHz 67 nV/√Hz in Input Noise Current fO = 0.1Hz to 10Hz 10 pAP-P Input Noise Current Density fO = 10Hz 124 fA/√Hz RIN Input Resistance VIN = ±10V 200 GΩ CIN(DIFF) Differential Input Capacitance fO = 100kHz 1.6 pF 2
W W W U U W U ABSOLUTE MAXIMUM RATINGS PACKAGE/ORDER INFORMATION (Note 1)
ORDER PART TOP VIEW Supply Voltage .. ±20V NUMBER Differential Input Voltage (Within the R 1 G 8 RG Supply Voltage) ... ±40V –IN – +V LT1920CN8 2 7 S Input Voltage (Equal to Supply Voltage) .. ±20V +IN 3 + 6 OUTPUT LT1920CS8 Input Current (Note 3) .. ±20mA –V 4 S 5 REF LT1920IN8 Output Short-Circuit Duration .. Indefinite LT1920IS8 N8 PACKAGE 8-LEAD PDIP Operating Temperature Range .. – 40°C to 85°C S8 PACKAGE Specified Temperature Range 8-LEAD PLASTIC SO S8 PART MARKING LT1920C (Note 4) .. 0°C to 70°C TJMAX = 150°C, θJA = 130°C/ W (N8) 1920 LT1920I .. – 40 T °C to 85°C JMAX = 150°C, θJA = 190°C/ W (S8) 1920I Storage Temperature Range ... – 65°C to 150°C Lead Temperature (Soldering, 10 sec).. 300°C Consult factory for Military grade parts.
ELECTRICAL CHARACTERISTICS VS =
±
15V, VCM = 0V, TA = 25
°
C, RL = 2k, unless otherwise noted. SYMBOL PARAMETER CONDITIONS (Note 6) MIN TYP MAX UNITS
G Gain Range G = 1 + (49.4k/RG) 1 10k Gain Error G = 1 0.008 0.1 % G = 10 (Note 2) 0.010 0.3 % G = 100 (Note 2) 0.025 0.3 % G = 1000 (Note 2) 0.040 0.35 % G/T Gain vs Temperature G < 1000 (Note 2) ● 20 50 ppm/°C Gain Nonlinearity (Note 5) VO = ±10V, G = 1 10 ppm VO = ±10V, G = 10 and 100 10 30 ppm VO = ±10V, G = 100 and 1000 20 ppm VOST Total Input Referred Offset Voltage VOST = VOSI + VOSO/G VOSI Input Offset Voltage G = 1000, VS = ±5V to ±15V 30 125 µV G = 1000, VS = ±5V to ±15V ● 185 µV VOSI/T Input Offset Drift (RTI) (Note 3) ● 1 µV/°C VOSO Output Offset Voltage G = 1, VS = ±5V to ±15V 400 1000 µV G = 1, VS = ±5V to ±15V ● 1500 µV VOSO/T Output Offset Drift (Note 3) ● 5 15 µV/°C IOS Input Offset Current 0.3 1 nA IB Input Bias Current 0.5 2 nA en Input Noise Voltage, RTI 0.1Hz to 10Hz, G = 1 2.00 µVP-P 0.1Hz to 10Hz, G = 10 0.50 µVP-P 0.1Hz to 10Hz, G = 100 and 1000 0.28 µVP-P Total RTI Noise = √e 2 ni + (eno/G)2 eni Input Noise Voltage Density, RTI fO = 1kHz 7.5 nV/√Hz eno Output Noise Voltage Density, RTI fO = 1kHz 67 nV/√Hz in Input Noise Current fO = 0.1Hz to 10Hz 10 pAP-P Input Noise Current Density fO = 10Hz 124 fA/√Hz RIN Input Resistance VIN = ±10V 200 GΩ CIN(DIFF) Differential Input Capacitance fO = 100kHz 1.6 pF 2