Datasheet LTC3812-5 (Analog Devices) - 4

LTC3812-5
The ELECTRICAL CHARACTERISTICS
l
denotes specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C (Note 2), INTVCC = VBOOST = VRNG = VEXTVCC = VNDRV = 5V, VFCB = VSW = 0V, unless otherwise specifi ed. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
IPGOOD PGOOD Leakage Current VPGOOD = 5V 0 2 μA PG Delay PGOOD Delay VFB Falling 120 μs
VCC Regulators
VEXTVCC EXTVCC Switchover Voltage EXTVCC Rising l 4.5 4.7 V EXTVCC Hysterisis 0.1 0.25 0.4 V VINTVCC,1 INTVCC Voltage from EXTVCC 6V < VEXTVCC < 15V 5.2 5.5 5.8 V ∆V V EXTVCC,1 EXTVCC - VINTVCC at Dropout ICC = 20mA, VEXTVCC = 5V 75 150 mV ∆V INTV LOADREG,1 CC Load Regulation from EXTVCC ICC = 0mA to 20mA, VEXTVCC = 10V 0.01 % VINTVCC,2 INTVCC Voltage from NDRV Regulator Linear Regulator in Operation 5.2 5.5 5.8 V ∆V INTV LOADREG,2 CC Load Regulation from NDRV ICC = 0mA to 20mA, VEXTVCC = 0 0.01 % INDRV Current into NDRV Pin VNDRV – VINTVCC = 3V 20 40 60 μA INDRVTO Linear Regulator Timeout Enable 210 270 350 μA Threshold VCCSR Maximum Supply Voltage Trickle Charger Shunt Regulator 15 V ICCSR Maximum Current into NDRV/INTVCC Trickle Charger Shunt Regulator, 10 mA INTVCC ≤ 16.7V (Note 8)
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
The LTC3812-5 is tested in a feedback loop that servos VFB to the may cause permanent damage to the device. Exposure to any Absolute reference voltage with the ITH pin forced to a voltage between 1V and 2V. Maximum Rating condition for extended periods may affect device
Note 5:
The dynamic input supply current is higher due to the power reliability and lifetime. MOSFET gate charging being delivered at the switching frequency
Note 2:
The LTC3812-5 is tested under pulsed load conditions such that (QG • fOSC). TJ ≈ TA.The LTC3812E-5 is guaranteed to meet performance specifi cations
Note 6:
Guaranteed by design. Not subject to test. from 0°C to 85°C. Specifi cations over the –40°C to 125°C operating
Note 7:
This IC includes overtemperature protection that is intended junction temperature range are assured by design, characterization and to protect the device during momentary overload conditions. Junction correlation with statistical process controls. The LTC3812I-5 is guaranteed temperature will exceed 125°C when overtemperature protection is active. to meet performance specifi cations over the full –40°C to 125°C operating Continuous operation above the specifi ed maximum operating junction junction temperature range. temperature may impair device reliability.
Note 3:
TJ is calculated from the ambient temperature TA and power
Note 8:
ICC is the sum of current into NDRV and INTVCC. dissipation PD according to the following formula: LTC3812-5: TJ = TA + (PD • 38°C/W)
PARAMETER LTC3810 LTC3810-5 LTC3812-5
Maximum VIN 100V 60V 60V MOSFET Gate Drive 6.35V to 14V 4.5V to 14V 4.5V to 14V INTVCC UV+ 6.2V 4.2V 4.2V INTVCC UV– 6V 4V 4V 38125fc 4