Datasheet LTC1050 (Analog Devices) - 3
| Fabricante | Analog Devices |
| Descripción | Precision Zero-Drift Operational Amplifier with Internal Capacitors |
| Páginas / Página | 16 / 3 — ELECTRICAL CH. ARA TERISTICS The. denotes specifications which apply over … |
| Formato / tamaño de archivo | PDF / 232 Kb |
| Idioma del documento | Inglés |
ELECTRICAL CH. ARA TERISTICS The. denotes specifications which apply over the full operating temperature
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LTC1050
ELECTRICAL CH C ARA TERISTICS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. VS =
±
5V LTC1050AM LTC1050AC PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
Input Noise Current f = 10Hz (Note 4) 1.8 1.8 fA/√Hz Common Mode Rejection Ratio VCM = V– to 2.7V 114 140 114 140 dB ● 110 110 dB Power Supply Rejection Ratio VS = ±2.375V to ±8V ● 125 140 125 140 dB Large-Signal Voltage Gain RL = 10k, VOUT = ±4V ● 130 160 130 160 dB Maximum Output Voltage Swing RL = 10k ● ± 4.7 ±4.85 ±4.7 ±4.85 V RL = 100k ±4.95 ±4.95 V Slew Rate RL = 10k, CL = 50pF 4 4 V/µs Gain Bandwidth Product 2.5 2.5 MHz Supply Current No Load 1 1.5 1 1.5 mA ● 2.3 2.3 mA Internal Sampling Frequency 2.5 2.5 kHz
The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. VS =
±
5V LTC1050M/H LTC1050C PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
Input Offset Voltage (Note 3) ±0.5 ±5 ±0.5 ±5 µV Average Input Offset Drift (Note 3) ● ±0.01 ±0.05 ±0.01 ±0.05 µV/°C Long Term Offset Voltage Drift 50 50 nV/√Mo Input Offset Current (Note 5) ±20 ±100 ±20 ±125 pA ● ±300 ±200 pA Input Bias Current (Note 5) ±10 ±50 ±10 ±75 pA ● ±2000 ±150 pA Input Noise Voltage RS = 100Ω, 0.1Hz to 10Hz (Note 6) 1.6 1.6 µVP-P RS = 100Ω, DC to 1Hz 0.6 0.6 µVP-P Input Noise Current f = 10Hz (Note 4) 1.8 1.8 fA/√Hz Common Mode Rejection Ratio VCM = V– to 2.7V 114 130 114 130 dB LTC1050M/C ● 110 110 dB LTC1050H ● 100 dB Power Supply Rejection Ratio VS = ±2.375V to ±8V, LTC1050M/C ● 120 140 120 140 dB LTC1050H ● 110 dB Large-Signal Voltage Gain RL = 10k, VOUT = ±4V ● 120 160 120 160 dB Maximum Output Voltage Swing RL = 10k ● ± 4.7 ±4.85 ±4.7 ±4.85 V RL = 100k ±4.95 ±4.95 V Slew Rate RL = 10k, CL = 50pF 4 4 V/µs Gain Bandwidth Product 2.5 2.5 MHz Supply Current No Load 1 1.5 1 1.5 mA ● 2.3 2.3 mA Internal Sampling Frequency 2.5 2.5 kHz
Note 1:
Absolute Maximum Ratings are those values beyond which the life
Note 4:
Current Noise is calculated from the formula: In = √(2q • Ib) of the device may be impaired. where q = 1.6 • 10–19 Coulomb.
Note 2:
Connecting any terminal to voltages greater than V+ or less than
Note 5:
At TA ≤ 0°C these parameters are guaranteed by design and not V– may cause destructive latchup. It is recommended that no sources tested. operating from external supplies be applied prior to power-up of the
Note 6:
Every lot of LTC1050AM and LTC1050AC is 100% tested for LTC1050. Broadband Noise at 1kHz and sample tested for Input Noise Voltage at
Note 3:
These parameters are guaranteed by design. Thermocouple effects 0.1Hz to 10Hz. preclude measurement of these voltage levels in high speed automatic test systems. VOS is measured to a limit determined by test equipment capability. 1050fb 3
ELECTRICAL CH C ARA TERISTICS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. VS =
±
5V LTC1050AM LTC1050AC PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
Input Noise Current f = 10Hz (Note 4) 1.8 1.8 fA/√Hz Common Mode Rejection Ratio VCM = V– to 2.7V 114 140 114 140 dB ● 110 110 dB Power Supply Rejection Ratio VS = ±2.375V to ±8V ● 125 140 125 140 dB Large-Signal Voltage Gain RL = 10k, VOUT = ±4V ● 130 160 130 160 dB Maximum Output Voltage Swing RL = 10k ● ± 4.7 ±4.85 ±4.7 ±4.85 V RL = 100k ±4.95 ±4.95 V Slew Rate RL = 10k, CL = 50pF 4 4 V/µs Gain Bandwidth Product 2.5 2.5 MHz Supply Current No Load 1 1.5 1 1.5 mA ● 2.3 2.3 mA Internal Sampling Frequency 2.5 2.5 kHz
The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. VS =
±
5V LTC1050M/H LTC1050C PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
Input Offset Voltage (Note 3) ±0.5 ±5 ±0.5 ±5 µV Average Input Offset Drift (Note 3) ● ±0.01 ±0.05 ±0.01 ±0.05 µV/°C Long Term Offset Voltage Drift 50 50 nV/√Mo Input Offset Current (Note 5) ±20 ±100 ±20 ±125 pA ● ±300 ±200 pA Input Bias Current (Note 5) ±10 ±50 ±10 ±75 pA ● ±2000 ±150 pA Input Noise Voltage RS = 100Ω, 0.1Hz to 10Hz (Note 6) 1.6 1.6 µVP-P RS = 100Ω, DC to 1Hz 0.6 0.6 µVP-P Input Noise Current f = 10Hz (Note 4) 1.8 1.8 fA/√Hz Common Mode Rejection Ratio VCM = V– to 2.7V 114 130 114 130 dB LTC1050M/C ● 110 110 dB LTC1050H ● 100 dB Power Supply Rejection Ratio VS = ±2.375V to ±8V, LTC1050M/C ● 120 140 120 140 dB LTC1050H ● 110 dB Large-Signal Voltage Gain RL = 10k, VOUT = ±4V ● 120 160 120 160 dB Maximum Output Voltage Swing RL = 10k ● ± 4.7 ±4.85 ±4.7 ±4.85 V RL = 100k ±4.95 ±4.95 V Slew Rate RL = 10k, CL = 50pF 4 4 V/µs Gain Bandwidth Product 2.5 2.5 MHz Supply Current No Load 1 1.5 1 1.5 mA ● 2.3 2.3 mA Internal Sampling Frequency 2.5 2.5 kHz
Note 1:
Absolute Maximum Ratings are those values beyond which the life
Note 4:
Current Noise is calculated from the formula: In = √(2q • Ib) of the device may be impaired. where q = 1.6 • 10–19 Coulomb.
Note 2:
Connecting any terminal to voltages greater than V+ or less than
Note 5:
At TA ≤ 0°C these parameters are guaranteed by design and not V– may cause destructive latchup. It is recommended that no sources tested. operating from external supplies be applied prior to power-up of the
Note 6:
Every lot of LTC1050AM and LTC1050AC is 100% tested for LTC1050. Broadband Noise at 1kHz and sample tested for Input Noise Voltage at
Note 3:
These parameters are guaranteed by design. Thermocouple effects 0.1Hz to 10Hz. preclude measurement of these voltage levels in high speed automatic test systems. VOS is measured to a limit determined by test equipment capability. 1050fb 3