Datasheet LT1112, LT1114 (Analog Devices) - 5

FabricanteAnalog Devices
DescripciónDual/Quad Low Power Precision, Picoamp Input Op Amps
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ELECTRICAL CHARACTERISTICS The. denotes the specifications which apply over the full operating. temperature range of 0

ELECTRICAL CHARACTERISTICS The denotes the specifications which apply over the full operating temperature range of 0

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LT1112/LT1114
ELECTRICAL CHARACTERISTICS The

denotes the specifications which apply over the full operating temperature range of 0
°
C

TA

70
°
C, otherwise specifications are at TA = 25
°
C. VS =
±
15V, unless otherwise noted. LT1112ACN8 LT1112CN8/S8/IS8 LT1114ACN LT1114CN/S/IS SYMBOL PARAMETER CONDITIONS (Note 3) MIN TYP MAX MIN TYP MAX UNITS
IS Supply Current per Amplifier ● 370 440 370 500 µA ∆VOS Offset Voltage Match LT1112CN8 ● 45 170 55 210 µV (Note 6) LT1112S8, LT1114CN/S ● 55 220 70 270 µV Offset Voltage Match Drift LT1112N8 ● 0.2 0.7 0.3 1.0 µV/°C (Notes 6, 9) LT1112S8, LT1114CN/S ● 0.4 1.6 0.5 1.9 µV/°C ∆I + B Noninverting Bias Current Match ● 120 530 135 620 pA (Notes 6, 7) LT1114S ● 160 880 pA ∆CMRR Common Mode Rejection Ratio (Notes 6, 8) ● 114 134 109 134 dB ∆PSRR Power Supply Rejection Ratio (Notes 6, 8) ● 110 128 108 128 dB
The

denotes the specifications which apply over the full operating temperature range of –40
°
C

TA

85
°
C, otherwise specifications are at TA = 25
°
C. VS =
±
15V, unless otherwise noted. (Note 12) LT1112ACN8 LT1112CN8/IN8/S8/IS8 LT1114ACN LT1114CN/S/IS SYMBOL PARAMETER CONDITIONS (Note 3) MIN TYP MAX MIN TYP MAX UNITS
VOS Input Offset Voltage LT1112CN8/IN8 ● 30 110 35 135 µV LT1112S8/IS8, LT1114CN/S/IS ● 40 135 45 160 µV VS = ±1.2V ● 55 200 60 240 µV ∆VOS Average Input Offset Voltage Drift LT1112CN8/IN8 ● 0.15 0.50 0.20 0.75 µV/°C ∆Temp LT1112S8/IS8, LT1114CN/S/IS ● 0.30 1.10 0.40 1.30 µV/°C IOS Input Offset Current ● 70 330 85 400 pA LT1114S/IS ● 110 600 pA IB Input Bias Current ● ±110 ±500 ±120 ±550 pA LT1114S/IS ● ±150 ±800 pA VCM Input Voltage Range ● ±13.5 ±14.1 ±13.5 ±14.1 V CMRR Common Mode Rejection Ratio VCM = ±13.5V ● 117 132 112 132 dB PSRR Power Supply Rejection Ratio VS = ±1.2V to ±20V ● 113 125 111 125 dB AVOL Large-Signal Voltage Gain VO = ±12V, RL = 10kΩ ● 700 3300 600 3300 V/mV VO = ±10V, RL = 2kΩ ● 400 1100 300 900 V/mV VOUT Output Voltage Swing RL = 10kΩ ● ±13.0 ±13.85 ±13.0 ±13.85 V SR Slew Rate ● 0.13 0.24 0.13 0.24 V/µs IS Supply Current per Amplifier ● 370 450 370 510 µA ∆VOS Offset Voltage Match LT1112CN8/IN8 ● 50 180 60 225 µV (Note 6) LT1112S8/IS8, LT1114CN/S/IS ● 60 230 70 270 µV Offset Voltage Match Drift LT1112CN8/IN8 ● 0.2 0.7 0.3 1.0 µV/°C (Notes 6) LT1112S8/IS8, LT1114CN/S/IS ● 0.4 1.6 0.5 1.9 µV/°C ∆I + B Noninverting Bias Current Match ● 140 660 155 770 pA (Notes 6, 7) LT1114S/IS ● 190 1300 pA ∆CMRR Common Mode Rejection Ratio (Notes 6, 8) ● 113 133 109 133 dB ∆PSRR Power Supply Rejection Ratio (Notes 6, 8) ● 110 127 107 127 dB
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 3:
Typical parameters are defined as the 60% yield of parameter may cause permanent damage to the device. Exposure to any Absolute distributions of individual amplifiers; i.e., out of 100 LT1114s (or 100 Maximum Rating condition for extended periods may affect device LT1112s) typically 240 op amps (or 120) will be better than the indicated reliability and lifetime. specification.
Note 4:
This parameter is guaranteed by design and is not tested.
Note 2:
Differential input voltages greater than 1V will cause excessive current to flow through the input protection diodes unless limiting resistance is used. 111214fb 5