Datasheet LTC1152 (Analog Devices) - 2
| Fabricante | Analog Devices |
| Descripción | Rail-to-Rail Input Rail-to-Rail Output Zero-Drift Op Amp |
| Páginas / Página | 8 / 2 — ABSOLUTE. AXI U. R TI GS. PACKAGE/ORDER I FOR ATIO. ELECTRICAL CHAR C |
| Formato / tamaño de archivo | PDF / 228 Kb |
| Idioma del documento | Inglés |
ABSOLUTE. AXI U. R TI GS. PACKAGE/ORDER I FOR ATIO. ELECTRICAL CHAR C
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LTC1152
W W W U U W U ABSOLUTE AXI U A R TI GS PACKAGE/ORDER I FOR ATIO
Total Supply Voltage (V + to V –) ... 14V ORDER PART Input Voltage .. V + + 0.3V to V – – 0.3V TOP VIEW NUMBER Output Short-Circuit Duration (Pin 6) ... Indefinite SHDN 1 8 CP –IN 2 7 V+ LTC1152CN8 Operating Temperature Range +IN 3 OUT LTC1152CS8 LTC1152C... 0°C to 70°C 6 LTC1152IN8 LTC1152I .. – 40°C to 85°C V– 4 5 COMP LTC1152IS8 Storage Temperature Range .. – 65°C to 150°C N8 PACKAGE Lead Temperature (Soldering, 10 sec)... 300°C 8-LEAD PDIP S8 PART MARKING S8 PACKAGE 8-LEAD PLASTIC SO 1152 TJMAX = 110°C, θJA = 130°C/ W (N8) TJMAX = 110°C, θJA = 200°C/ W (S8) 1152I Consult factory for Military grade parts.
ELECTRICAL CHAR C A TERISTICS VS = 5V, TA = operating temperature range, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage TA = 25°C (Note 1) ±1 ±10 µV ∆VOS Average Input Offset Drift (Note 1) ● ±10 ±100 nV/°C Long-Term Offset Drift ±50 nV/√Mo IB Input Bias Current TA = 25°C (Note 2) ±10 ±100 pA ● ±1000 pA IOS Input Offset Current TA = 25°C (Note 2) ±20 ±200 pA ● ±500 pA en Input Noise Voltage (Note 3) RS = 100Ω, 0.1Hz to 10Hz 2 3 µVP-P RS = 100Ω, 0.1Hz to 1Hz 0.5 1 µVP-P in Input Noise Current f = 10Hz 0.6 fA/√Hz CMRR Common-Mode Rejection Ratio VCM = 0V to 5V ● 115 130 dB PSRR Power Supply Rejection Ratio VS = 3V to 12V 110 120 dB ● 105 dB AVOL Large-Signal Voltage Gain RL = 10k, VOUT = 0.5V to 4.5V ● 110 130 dB VOUT Maximum Output Voltage Swing (Note 4) RL = 1k, VS = Single 5V ● 4.0 4.4 V RL = 1k, VS = ±2.5V ● ±2.0 2.2 V RL = 100k, VS = ±2.5V ±2.49 V SR Slew Rate RL = 10k, CL = 50pF, VS = ±2.5V 0.5 V/µs GBW Gain-Bandwidth Product RL = 10k, CL = 50pF, VS = ±2.5V 0.7 MHz IS Supply Current No Load ● 2.2 3.0 mA Shutdown = 0V ● 1 5 µA IOSD Output Leakage Current Shutdown = 0V ● ±10 ±100 nA VCP Charge Pump Output Voltage ICP = 0 7.3 V VIL Shutdown Pin Input Low Voltage 2.5 V VIH Shutdown Pin Input High Voltage 4 V IIN Shutdown Pin Input Current VSHDN = 0V ● – 1 – 5 µA fCP Internal Charge Pump Frequency TA = 25°C 4.7 MHz fSMPL Internal Sampling Frequency TA = 25°C 2.3 kHz 2
W W W U U W U ABSOLUTE AXI U A R TI GS PACKAGE/ORDER I FOR ATIO
Total Supply Voltage (V + to V –) ... 14V ORDER PART Input Voltage .. V + + 0.3V to V – – 0.3V TOP VIEW NUMBER Output Short-Circuit Duration (Pin 6) ... Indefinite SHDN 1 8 CP –IN 2 7 V+ LTC1152CN8 Operating Temperature Range +IN 3 OUT LTC1152CS8 LTC1152C... 0°C to 70°C 6 LTC1152IN8 LTC1152I .. – 40°C to 85°C V– 4 5 COMP LTC1152IS8 Storage Temperature Range .. – 65°C to 150°C N8 PACKAGE Lead Temperature (Soldering, 10 sec)... 300°C 8-LEAD PDIP S8 PART MARKING S8 PACKAGE 8-LEAD PLASTIC SO 1152 TJMAX = 110°C, θJA = 130°C/ W (N8) TJMAX = 110°C, θJA = 200°C/ W (S8) 1152I Consult factory for Military grade parts.
ELECTRICAL CHAR C A TERISTICS VS = 5V, TA = operating temperature range, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage TA = 25°C (Note 1) ±1 ±10 µV ∆VOS Average Input Offset Drift (Note 1) ● ±10 ±100 nV/°C Long-Term Offset Drift ±50 nV/√Mo IB Input Bias Current TA = 25°C (Note 2) ±10 ±100 pA ● ±1000 pA IOS Input Offset Current TA = 25°C (Note 2) ±20 ±200 pA ● ±500 pA en Input Noise Voltage (Note 3) RS = 100Ω, 0.1Hz to 10Hz 2 3 µVP-P RS = 100Ω, 0.1Hz to 1Hz 0.5 1 µVP-P in Input Noise Current f = 10Hz 0.6 fA/√Hz CMRR Common-Mode Rejection Ratio VCM = 0V to 5V ● 115 130 dB PSRR Power Supply Rejection Ratio VS = 3V to 12V 110 120 dB ● 105 dB AVOL Large-Signal Voltage Gain RL = 10k, VOUT = 0.5V to 4.5V ● 110 130 dB VOUT Maximum Output Voltage Swing (Note 4) RL = 1k, VS = Single 5V ● 4.0 4.4 V RL = 1k, VS = ±2.5V ● ±2.0 2.2 V RL = 100k, VS = ±2.5V ±2.49 V SR Slew Rate RL = 10k, CL = 50pF, VS = ±2.5V 0.5 V/µs GBW Gain-Bandwidth Product RL = 10k, CL = 50pF, VS = ±2.5V 0.7 MHz IS Supply Current No Load ● 2.2 3.0 mA Shutdown = 0V ● 1 5 µA IOSD Output Leakage Current Shutdown = 0V ● ±10 ±100 nA VCP Charge Pump Output Voltage ICP = 0 7.3 V VIL Shutdown Pin Input Low Voltage 2.5 V VIH Shutdown Pin Input High Voltage 4 V IIN Shutdown Pin Input Current VSHDN = 0V ● – 1 – 5 µA fCP Internal Charge Pump Frequency TA = 25°C 4.7 MHz fSMPL Internal Sampling Frequency TA = 25°C 2.3 kHz 2