Datasheet LT1884, LT1885 (Analog Devices) - 6
| Fabricante | Analog Devices |
| Descripción | Dual/Quad Rail-to-Rail Output, Picoamp Input Precision Op Amps |
| Páginas / Página | 12 / 6 — ELECTRICAL CHARACTERISTICS. Note 1:. Note 6:. Note 7:. Note 2:. Note 8:. … |
| Formato / tamaño de archivo | PDF / 173 Kb |
| Idioma del documento | Inglés |
ELECTRICAL CHARACTERISTICS. Note 1:. Note 6:. Note 7:. Note 2:. Note 8:. Note 3:. Note 9:. Note 4:. Note 5:
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LT1884/LT1885
ELECTRICAL CHARACTERISTICS Note 1:
Absolute Maximum Ratings are those values beyond which the life
Note 6:
This parameter is not 100% tested. of the device may be impaired.
Note 7:
Matching parameters are the difference between amplifiers A and
Note 2:
The inputs are protected by back-to-back diodes. If the differential B in the LT1884 and between amplifiers A and D and B and C in the input voltage exceeds 0.7V, the input current should be limited to less than LT1885. 10mA.
Note 8:
This parameter is the difference between the two noninverting
Note 3:
A heat sink may be required to keep the junction temperature input bias currents. below absolute maximum.
Note 9:
∆CMRR and ∆PSRR are defined as follows: CMRR and PSRR are
Note 4:
The LT1884C/LT1885C and LT1884I/LT1885I are guaranteed measured in µV/V on each amplifier. The difference is calculated in µV/V functional over the operating temperature range of – 40°C to 85°C. and then converted to dB.
Note 5:
The LT1884C/LT1885C are designed, characterized and expected to meet specified performance from – 40°C to 85°C but are not tested or QA sampled at these temperatures. LT1884I is guaranteed to meet specified performance from – 40°C to 85°C.
W U TYPICAL PERFOR A CE CHARACTERISTICS Input Offset Voltage Distribution of Offset Voltage Drift vs Temperature VOUT vs ISINK
24 200 500 VS = ±15V TEMPCO: –55°C TO 125°C VS = ±15V 150 10 REPRESENTATIVE UNITS 20 400 µV) 100 125°C 16 50 300 ) (mV) EE 12 0 25°C – V 200 –50 OUT 8 (V PERCENT OF UNITS (%) –100 INPUT OFFSET VOLTAGE ( 100 4 –55°C –150 0 –200 0 –0.9 –0.7 –0.5 –0.3 –0.1 0.1 0.3 0.5 0.7 0.9 –50 –30 –10 10 30 50 70 90 110 125 10µA 100µA 1mA 10mA OFFSET VOLTAGE DRIFT (µV/°C) TEMPERATURE (°C) ISINK 18845 G03 18845 G01 18845 G02
VOUT vs ISOURCE Gain vs Frequency Gain, Phase Shift vs Frequency
500 140 100 –80 VS = ±15V VS = ±15V 90 –90 120 80 PHASE SHIFT –100 400 125°C 100 70 –110 PHASE SHIFT (DEG) 60 –120 80 ) (mV) 300 25°C 50 –130 OUT 60 40 –140 – V 200 GAIN (dB) 30 –150 CC 40 (V –55°C 20 –160 VOLTAGE GAIN (dB) 20 10 GAIN –170 100 0 –180 0 –10 0 –20 –20 10µA 100µA 1mA 10mA 0.1 1 10 100 1k 10k 100k 1M 10M 10k 100k 1M 10M ISOURCE FREQUENCY (Hz) FREQUENCY (Hz) 18845 G04 18845 G05 18845 G06 6
ELECTRICAL CHARACTERISTICS Note 1:
Absolute Maximum Ratings are those values beyond which the life
Note 6:
This parameter is not 100% tested. of the device may be impaired.
Note 7:
Matching parameters are the difference between amplifiers A and
Note 2:
The inputs are protected by back-to-back diodes. If the differential B in the LT1884 and between amplifiers A and D and B and C in the input voltage exceeds 0.7V, the input current should be limited to less than LT1885. 10mA.
Note 8:
This parameter is the difference between the two noninverting
Note 3:
A heat sink may be required to keep the junction temperature input bias currents. below absolute maximum.
Note 9:
∆CMRR and ∆PSRR are defined as follows: CMRR and PSRR are
Note 4:
The LT1884C/LT1885C and LT1884I/LT1885I are guaranteed measured in µV/V on each amplifier. The difference is calculated in µV/V functional over the operating temperature range of – 40°C to 85°C. and then converted to dB.
Note 5:
The LT1884C/LT1885C are designed, characterized and expected to meet specified performance from – 40°C to 85°C but are not tested or QA sampled at these temperatures. LT1884I is guaranteed to meet specified performance from – 40°C to 85°C.
W U TYPICAL PERFOR A CE CHARACTERISTICS Input Offset Voltage Distribution of Offset Voltage Drift vs Temperature VOUT vs ISINK
24 200 500 VS = ±15V TEMPCO: –55°C TO 125°C VS = ±15V 150 10 REPRESENTATIVE UNITS 20 400 µV) 100 125°C 16 50 300 ) (mV) EE 12 0 25°C – V 200 –50 OUT 8 (V PERCENT OF UNITS (%) –100 INPUT OFFSET VOLTAGE ( 100 4 –55°C –150 0 –200 0 –0.9 –0.7 –0.5 –0.3 –0.1 0.1 0.3 0.5 0.7 0.9 –50 –30 –10 10 30 50 70 90 110 125 10µA 100µA 1mA 10mA OFFSET VOLTAGE DRIFT (µV/°C) TEMPERATURE (°C) ISINK 18845 G03 18845 G01 18845 G02
VOUT vs ISOURCE Gain vs Frequency Gain, Phase Shift vs Frequency
500 140 100 –80 VS = ±15V VS = ±15V 90 –90 120 80 PHASE SHIFT –100 400 125°C 100 70 –110 PHASE SHIFT (DEG) 60 –120 80 ) (mV) 300 25°C 50 –130 OUT 60 40 –140 – V 200 GAIN (dB) 30 –150 CC 40 (V –55°C 20 –160 VOLTAGE GAIN (dB) 20 10 GAIN –170 100 0 –180 0 –10 0 –20 –20 10µA 100µA 1mA 10mA 0.1 1 10 100 1k 10k 100k 1M 10M 10k 100k 1M 10M ISOURCE FREQUENCY (Hz) FREQUENCY (Hz) 18845 G04 18845 G05 18845 G06 6