Datasheet LT1389 (Analog Devices) - 3

LT1389
2.5V ELECTRICAL CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 3) PARAMETER CONDITIONS MIN TYP MAX UNITS
Reverse Breakdown Voltage LT1389BCS8 (IR = 0.9µA) 2.49875 2.500 2.50125 V – 0.05 0.05 % LT1389BCS8 (IR = 0.9µA) ● 2.49525 2.500 2.50475 V – 0.19 0.19 % Reverse Breakdown Change 0.9µA ≤ IR ≤ 200µA 0.2 0.5 mV with Current (Note 4) ● 0.2 1.5 mV 200µA ≤ IR ≤ 2mA 0.3 1.0 mV ● 0.3 2.5 mV Minimum Operating Current ● 0.7 µA Temperature Coefficient IR = 0.9µA ● 8 20 ppm/°C Reverse Dynamic Impedance (Note 5) 0.9µA ≤ IR ≤ 2mA 0.25 0.75 Ω ● 0.25 2 Ω Low Frequency Noise (Note 6) IR = 0.9µA, 0.1Hz ≤ f ≤ 10Hz 50 µVP-P
4.096V ELECTRICAL CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 3) PARAMETER CONDITIONS MIN TYP MAX UNITS
Reverse Breakdown Voltage LT1389BCS8 (IR = 1.5µA) 4.09293 4.096 4.09907 V – 0.075 0.075 % LT1389BCS8 (IR = 1.5µA) ● 4.0788 4.096 4.1132 V – 0.42 0.42 % Reverse Breakdown Change 1.5µA ≤ IR ≤ 200µA 0.2 1.5 mV with Current (Note 4) ● 0.2 3 mV 200µA ≤ IR ≤ 2mA 0.3 4 mV ● 0.3 6 mV Minimum Operating Current ● 1 µA Temperature Coefficient IR = 1.5µA ● 12 50 ppm/°C Reverse Dynamic Impedance (Note 5) 1.5µA ≤ IR ≤ 2mA 0.75 2 Ω ● 0.75 3 Ω Low Frequency Noise (Note 6) IR = 1.5µA, 0.1Hz ≤ f ≤ 10Hz 80 µVP-P 3