Datasheet LTC4008 (Analog Devices) - 4

FabricanteAnalog Devices
Descripción4A, High Efficiency, Multi-Chemistry Battery Charger
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ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply over the full operating

ELECTRICAL CHARACTERISTICS The denotes the specifications which apply over the full operating

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link to page 9 LTC4008
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VDCIN = 20V, VBAT = 12V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Input P-Channel FET Driver (INFET) (LTC4008 Only)
DCIN Detection Threshold (VDCIN – VCLP) DCIN Voltage Ramping Up l 0 0.17 0.25 V from VCLP – 0.1V Forward Regulation Voltage (VDCIN – VCLP) l 25 50 mV Reverse Voltage Turn-Off Voltage (VDCIN – VCLP) DCIN Voltage Ramping Down l –60 –25 mV INFET “On” Clamping Voltage (VCLP – VINFET) IINFET = 1µA l 5 5.8 6.5 V INFET “Off” Clamping Voltage (VCLP – VINFET) IINFET = –25µA 0.25 V
Thermistor
NTCVR Reference Voltage During Sample Time 4.5 V High Threshold VNTC Rising l NTCVR NTCVR NTCVR V • 0.48 • 0.5 • 0.52 Low Threshold VNTC Falling l NTCVR NTCVR NTCVR V • 0.115 • 0.125 • 0.135 Thermistor Disable Current VNTC ≤ 10V 10 µA
Indicator Outputs (ACP/SHDN, FLAG, ICL, FAULT
C10TOL FLAG (C/10) Accuracy Voltage Falling at PROG l 0.375 0.397 0.420 V ICL Threshold Accuracy VCLP – VCLN 83 93 105 mV VOL Low Logic Level of ACP/SHDN, FLAG, ICL, FAULT IOL = 100µA 0.5 V VOH High Logic Level of ACP/SHDN, ICL IOH = –1µA l 2.7 V IOFF Off State Leakage Current of FLAG, FAULT VOH = 3V –1 1 µA IPO Pull-Up Current on ACP/SHDN, ICL V = 0V –10 µA
Oscillator
fOSC Regulator Switching Frequency 255 300 345 kHz fMIN Regulator Switching Frequency in Drop Out Duty Cycle ≥ 98% 20 25 kHz DCMAX Regulator Maximum Duty Cycle VCSP = VBAT 98 99 %
Gate Drivers (TGATE, BGATE)
VTGATE High (VCLP – VTGATE) ITGATE = –1mA 50 mV VBGATE High CLOAD = 3000pF 5.6 10 V VTGATE Low (VCLP – VTGATE) CLOAD = 3000pF 5.6 10 V VBGATE Low IBGATE = 1mA 50 mV TGATE Transition Time TGTR TGATE Rise Time CLOAD = 3000pF, 10% to 90% 50 110 ns TGTF TGATE Fall Time CLOAD = 3000pF, 10% to 90% 50 100 ns BGATE Transition Time BGTR BGATE Rise Time CLOAD = 3000pF, 10% to 90% 40 90 ns BGTF BGATE Fall Time CLOAD = 3000pF, 10% to 90% 40 80 ns VTGATE at Shutdown (VCLP – VTGATE) ITGATE = –1µA, DCIN = 0V, CLP = 12V 100 mV VBGATE at Shutdown IBGATE = 1µA, DCIN = 0V, CLP = 12V 100 mV
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
The LTC4008E is guaranteed to meet performance specifications may cause permanent damage to the device. Exposure to any Absolute from 0°C to 70°C. Specifications over the –40°C to 85°C operating Maximum Rating condition for extended periods may affect device temperature range are assured by design, characterization and correlation reliability and lifetime. with statistical process controls.
Note 2:
See “Test Circuit”.
Note 5:
Voltage accuracy includes BATMON error and voltage reference
Note 3:
Does not include tolerance of current sense resistor or current error. Does not include error of external resistor divider. programming resistor. Rev C 4 For more information www.analog.com Document Outline Description Typical Application Absolute Maximum Ratings Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Package Description Typical Application Related Parts Features Applications Typical Application Description Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Test Circuit Operation Applications Information Package Description Revision History Related Parts