Datasheet LTC4101 (Analog Devices) - 6
| Fabricante | Analog Devices |
| Descripción | Smart Battery Charger Controller |
| Páginas / Página | 30 / 6 — TYPICAL PERFORMANCE CHARACTERISTICS TA = 25°C, unless otherwise noted. … |
| Formato / tamaño de archivo | PDF / 261 Kb |
| Idioma del documento | Inglés |
TYPICAL PERFORMANCE CHARACTERISTICS TA = 25°C, unless otherwise noted. INFET Response Time to Reverse Current
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LTC4101
TYPICAL PERFORMANCE CHARACTERISTICS TA = 25°C, unless otherwise noted. INFET Response Time to Reverse Current Output Voltage vs Output Current PWM Frequency vs Duty Cycle
0 350 Vgs OF PFET (2V/DIV) V –0.5 gs = 0 300 –1.0 –1.5 250 –2.0 Vs OF PFET (5V/DIV) 200 –2.5 TAGE ERROR (%) 150 –3.0 PROGRAMMED CURRENT = 10% –3.5 WM FREQUENCY (kHz) 100 Vs = 0V P OUTPUT VOL –4.0 I V d (REVERSE) OF DCIN = 20V DCIN = 9V 50 PFET (5A/DIV) V –4.5 PROG = 4.176V DCIN = 12V IPROG = 4V DCIN = 24V Id = 0A –5.0 0 1.25μs/DIV 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TEST PERFORMED ON DEMOBOARD OUTPUT CURRENT (A) DUTY CYCLE (VOUT/VIN) VIN = 15VDC VCHARGE = 4.2V 4101 G02 4101 G03 CHARGER = ON INFET = 1/2 Si4925DY ICHARGE = <10mA 4101 G01
Disconnect/Reconnect Battery Battery Leakage Current (Load Dump) vs Battery Voltage Effi ciency at VPROG = 4.208V
40 100 VDCIN = 0V 3A STEP 35 96 VIN = 8V 30 1A STEP 1A STEP 92 VFLOAT 25 1V/(DIV) 88 20 VIN = 20V 84 15 3A STEP Y LEAKAGE CURRENT (μA) LOAD 10 POWER EFFICIENCY (%) 80 STATE DISCONNECT RECONNECT TTER BA 5 76 0 72 LOAD CURRENT = 1A, 2A, 3A 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DCIN = 12V BATTERY VOLTAGE (V) IOUT (A) VFLOAT = 4.2V 4101 G05 4101 G06 4101 G04
SMBus Accelerator Operation Low Current Operation
0.6 VDD = 5V VDD = 5V 5V CBUS = 200pF VBAT = 4V 0.5 VDCIN = 20V VPROG = 4.208V 0.4 LTC4101 (A) NO LOW 0.3 CURRENT MODE R I CHARGE PULLUP = 15k PROGRAMMED 0.2 CURRENT 0V LOW 0.1 CURRENT MODE 0 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 1μs/DIV IPROG (A) 4101 G07 4101 G08 4101fa 6
TYPICAL PERFORMANCE CHARACTERISTICS TA = 25°C, unless otherwise noted. INFET Response Time to Reverse Current Output Voltage vs Output Current PWM Frequency vs Duty Cycle
0 350 Vgs OF PFET (2V/DIV) V –0.5 gs = 0 300 –1.0 –1.5 250 –2.0 Vs OF PFET (5V/DIV) 200 –2.5 TAGE ERROR (%) 150 –3.0 PROGRAMMED CURRENT = 10% –3.5 WM FREQUENCY (kHz) 100 Vs = 0V P OUTPUT VOL –4.0 I V d (REVERSE) OF DCIN = 20V DCIN = 9V 50 PFET (5A/DIV) V –4.5 PROG = 4.176V DCIN = 12V IPROG = 4V DCIN = 24V Id = 0A –5.0 0 1.25μs/DIV 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TEST PERFORMED ON DEMOBOARD OUTPUT CURRENT (A) DUTY CYCLE (VOUT/VIN) VIN = 15VDC VCHARGE = 4.2V 4101 G02 4101 G03 CHARGER = ON INFET = 1/2 Si4925DY ICHARGE = <10mA 4101 G01
Disconnect/Reconnect Battery Battery Leakage Current (Load Dump) vs Battery Voltage Effi ciency at VPROG = 4.208V
40 100 VDCIN = 0V 3A STEP 35 96 VIN = 8V 30 1A STEP 1A STEP 92 VFLOAT 25 1V/(DIV) 88 20 VIN = 20V 84 15 3A STEP Y LEAKAGE CURRENT (μA) LOAD 10 POWER EFFICIENCY (%) 80 STATE DISCONNECT RECONNECT TTER BA 5 76 0 72 LOAD CURRENT = 1A, 2A, 3A 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DCIN = 12V BATTERY VOLTAGE (V) IOUT (A) VFLOAT = 4.2V 4101 G05 4101 G06 4101 G04
SMBus Accelerator Operation Low Current Operation
0.6 VDD = 5V VDD = 5V 5V CBUS = 200pF VBAT = 4V 0.5 VDCIN = 20V VPROG = 4.208V 0.4 LTC4101 (A) NO LOW 0.3 CURRENT MODE R I CHARGE PULLUP = 15k PROGRAMMED 0.2 CURRENT 0V LOW 0.1 CURRENT MODE 0 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 1μs/DIV IPROG (A) 4101 G07 4101 G08 4101fa 6