Datasheet LTC4012, LTC4012-1, LTC4012-2 (Analog Devices) - 4

FabricanteAnalog Devices
DescripciónHigh Efficiency, Multi-Chemistry Battery Charger with PowerPath Control
Páginas / Página28 / 4 — The. denotes the specifications which apply over the full operating
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The. denotes the specifications which apply over the full operating

The denotes the specifications which apply over the full operating

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LTC4012/ LTC4012-1/LTC4012-2 e lectrical characteristics
The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. DCIN = 20V, BAT = 12V, GND = 0V unless otherwise noted. (Note 2) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
RIN SHDN Pull-Down Resistance 40 kΩ ICLPS CLP Shutdown Current CLP = 12V, DCIN = 0V l 15 26 µA SHDN = 0V 350 500 µA ILEAK-BAT BAT Leakage Current SHDN = 0V or DCIN = 0V, l –1.5 0 1.5 µA 0V ≤ CSP = CSN = BAT ≤ 18V ILEAK-CSN CSN Leakage Current SHDN = 0V or DCIN = 0V, l –1.5 0 1.5 µA 0V ≤ CSP = CSN = BAT ≤ 20V ILEAK-CSP CSP Leakage Current SHDN = 0V or DCIN = 0V, l –1.5 0 1.5 µA 0V ≤ CSP = CSN = BAT ≤ 20V ILEAK-SW SW Leakage Current SHDN = 0V or DCIN = 0V, l –1 0 2 µA 0V ≤ SW ≤ 20V
INTVDD Regulator
INTVDD Output Voltage No Load l 4.85 5 5.15 V ∆VDD Load Regulation IDD = 20mA –0.4 –1 % IDD Short-Circuit Current (Note 5) INTVDD = 0V 50 85 130 mA
Switching Regulator
IITH ITH Current ITH = 1.4V –40/+90 µA fTYP Typical Switching Frequency 467 550 633 kHz fMIN Minimum Switching Frequency CLOAD = 3.3nF 20 25 kHz DCMAX Maximum Duty Cycle CLOAD = 3.3nF 98 99 % tR-TG TGATE Rise Time CLOAD = 3.3nF, 10% – 90% 60 110 ns tF-TG TGATE Fall Time CLOAD = 3.3nF, 90% – 10% 50 110 ns tR-BG BGATE Rise Time CLOAD = 3.3nF, 10% – 90% 60 110 ns tF-BG BGATE Fall Time CLOAD = 3.3nF, 90% – 10% 60 110 ns tNO TGATE, BGATE Non-Overlap Time CLOAD = 3.3nF, 10% – 10% 110 ns
PowerPath Control
IDCIN DCIN Input Current 0V ≤ DCIN ≤ CLP l –10 60 µA VFTO Forward Turn-On Voltage (DCIN Detection Threshold) DCIN-CLP, DCIN rising l 15 60 mV VFR Forward Regulation Voltage DCIN-CLP l 15 25 35 mV VRTO Reverse Turn-Off Voltage DCIN-CLP, DCIN falling l –45 –25 –15 mV VOL(INFET) INFET Output Low Voltage, Relative to CLP DCIN-CLP = 0.1V, IINFET =1µA –6.5 –5 V VOH(INFET) INFET Output High Voltage, Relative to CLP DCIN-CLP = –0.1V, IINFET =–5µA –250 250 mV tIF(ON) INFET Turn-On Time To CLP-INFET > 3V, CINFET = 1nF 85 180 µs tIF(OFF) INFET Turn-Off Time To CLP-INFET < 1.5V, CINFET = 1nF 2.5 6 µs
Float Voltage Select Inputs (LTC4012-1/LTC4012-2 Only)
VIL Input Voltage Low 0.5 V VIH Input Voltage High 3.5 V IIN Input Current 0V ≤ VIN ≤ 5V –10 10 µA
Indicator Outputs
VOL Output Voltage Low ILOAD = 100µA, PROG = 1.2V 500 mV ILEAK Output Leakage SHDN = 0V, DCDIV = 0V, l –10 10 µA VOUT = 20V IC10 CHRG C/10 Current Sink CHRG = 2.5V l 15 25 38 µA 4012fa Document Outline Features Applications Description Typical Application Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Test Circuits Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Package Description Revision History Typical Application Related Parts