Datasheet LTC4360-1, LTC4360-2 (Analog Devices) - 8

link to page 8 LTC4360-1/LTC4360-2
APPLICATIONS INFORMATION
GATEP Zener protects the MOSFET from gate overvoltage For near zero reverse leakage current protection when by clamping its VGS to 5.8V when VIN goes high. GATE is pulled to ground, back-to-back N-channel MOSFETs can be used. Adding an additional P-channel
MOSFET Configurations and Selection
MOSFET controlled by GATEP (LTC4360-2) provides neg- The LTC4360 can be used with various external MOSFET ative input voltage protection down to the BVDSS of the configurations (see Figure 3). The simplest configuration P-channel MOSFET. Another configuration consists of a is a single N-channel MOSFET. It has the lowest R P-channel MOSFET controlled by GATEP and a N-channel DS(ON) and voltage drop and is thus the most power efficient MOSFET control ed by GATE. This provides protection solution. When GATE is pulled to ground, the MOSFET against overvoltage and negative voltage but not reverse can isolate OUT from a positive voltage at IN up to the current. BVDSS of the MOSFET. However, reverse current can still flow from OUT to IN via the parasitic body diode of the MOSFET. OVERVOLTAGE PROTECTION SUPPLY M1 IN OUT GATE OVERVOLTAGE, REVERSE CURRENT PROTECTION SUPPLY M1 M3 IN OUT GATE NEGATIVE VOLTAGE OVERVOLTAGE, REVERSE PROTECTION CURRENT PROTECTION SUPPLY M2 M1 M3 IN OUT GATEP GATE NEGATIVE VOLTAGE OVERVOLTAGE PROTECTION PROTECTION SUPPLY M2 M1 IN OUT GATEP GATE 436012 F03
Figure 3. MOSFET Configurations
Rev B 8 For more information www.analog.com Document Outline Features Applications Typical Application Description Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Package Description Revision History Typical Application Related Parts