Datasheet LTC4367 (Analog Devices) - 6
| Fabricante | Analog Devices |
| Descripción | 100V Overvoltage, Undervoltage and Reverse Supply Protection Controller |
| Páginas / Página | 22 / 6 — TYPICAL PERFORMANCE CHARACTERISTICS. UV/OV/SHDN Leakage vs. UV Threshold … |
| Formato / tamaño de archivo | PDF / 880 Kb |
| Idioma del documento | Inglés |
TYPICAL PERFORMANCE CHARACTERISTICS. UV/OV/SHDN Leakage vs. UV Threshold vs Temperature. OV Threshold vs Temperature
Línea de modelo para esta hoja de datos
- LTC4367CDD#PBF LTC4367CDD#TRPBF LTC4367CDD-1#PBF LTC4367CDD-1#TRPBF LTC4367CMS8#PBF LTC4367CMS8#TRPBF LTC4367CMS8-1#PBF LTC4367CMS8-1#TRPBF LTC4367HDD#PBF LTC4367HDD#TRPBF LTC4367HDD-1#PBF LTC4367HDD-1#TRPBF LTC4367HMS8#PBF LTC4367HMS8#TRPBF LTC4367HMS8-1#PBF LTC4367HMS8-1#TRPBF LTC4367IDD#PBF LTC4367IDD#TRPBF LTC4367IDD-1#PBF LTC4367IDD-1#TRPBF LTC4367IMS8#PBF LTC4367IMS8#TRPBF LTC4367IMS8-1#PBF LTC4367IMS8-1#TRPBF
Versión de texto del documento
LTC4367
TYPICAL PERFORMANCE CHARACTERISTICS UV/OV/SHDN Leakage vs UV Threshold vs Temperature OV Threshold vs Temperature Temperature
508 508 8 V V IN = VOUT = 12V VIN = VOUT = 12V IN = VOUT = 60V 6 504 504 4 SHDN = 60V (mV) 500 (mV) 500 (nA) V UV V OV I LEAK 2 496 496 0 UV/OV = 0.5V 492 492 –2 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 TEMPERATURE (°C) TEMPERATURE (°C) TEMPERATURE (°C) 4367 G10 4367 G11 4367 G12
UV/OV Propagation Delay vs LTC4367 GATE Turn-On Delay LTC4367 GATE Turn-On Delay Overdrive Time vs Temperature Time vs VIN
50 50
Recovery Delay Time vs
50 VIN = VOUT = 12V T
Temperature
A = 25°C 40 40 40 TA = 125°C TA = –45°C 30 30 30 (µs) (ms) T T (ms) VIN = 12V, 60V A = 25°C t FAUL 20 t D(ON) 20 t D(ON) 20 V 10 IN = 2.5V 10 10 0 0 0 1 10 100 1k –50 –25 0 25 50 75 100 125 0 10 20 30 40 50 60 OVERDRIVE (mV) TEMPERATURE (°C) VIN (V) 4367 G13 4367 G14 4367 G15
LTC4367 AC Blocking Turn-On Timing Turn-Off Timing
1V/DIV VOUT DUAL Si7942 MOSFET GND GATE 5V/DIV GATE 100µF, 12Ω LOAD VIN = 12V V V IN OUT 20V/DIV 5V/DIV VOUT GND GATE GND VIN = 12V GND DUAL Si7942 MOSFET 100µF, 12Ω LOAD DUAL Si7942 1k, 10µF LOAD ON VOUT 3V/DIV SHDN 3V/DIV SHDN 4367 G16 4367 G17 4367 G18 5ms/DIV 400µs/DIV 400µs/DIV 4367fb 6 For more information www.linear.com/LTC4367
TYPICAL PERFORMANCE CHARACTERISTICS UV/OV/SHDN Leakage vs UV Threshold vs Temperature OV Threshold vs Temperature Temperature
508 508 8 V V IN = VOUT = 12V VIN = VOUT = 12V IN = VOUT = 60V 6 504 504 4 SHDN = 60V (mV) 500 (mV) 500 (nA) V UV V OV I LEAK 2 496 496 0 UV/OV = 0.5V 492 492 –2 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 TEMPERATURE (°C) TEMPERATURE (°C) TEMPERATURE (°C) 4367 G10 4367 G11 4367 G12
UV/OV Propagation Delay vs LTC4367 GATE Turn-On Delay LTC4367 GATE Turn-On Delay Overdrive Time vs Temperature Time vs VIN
50 50
Recovery Delay Time vs
50 VIN = VOUT = 12V T
Temperature
A = 25°C 40 40 40 TA = 125°C TA = –45°C 30 30 30 (µs) (ms) T T (ms) VIN = 12V, 60V A = 25°C t FAUL 20 t D(ON) 20 t D(ON) 20 V 10 IN = 2.5V 10 10 0 0 0 1 10 100 1k –50 –25 0 25 50 75 100 125 0 10 20 30 40 50 60 OVERDRIVE (mV) TEMPERATURE (°C) VIN (V) 4367 G13 4367 G14 4367 G15
LTC4367 AC Blocking Turn-On Timing Turn-Off Timing
1V/DIV VOUT DUAL Si7942 MOSFET GND GATE 5V/DIV GATE 100µF, 12Ω LOAD VIN = 12V V V IN OUT 20V/DIV 5V/DIV VOUT GND GATE GND VIN = 12V GND DUAL Si7942 MOSFET 100µF, 12Ω LOAD DUAL Si7942 1k, 10µF LOAD ON VOUT 3V/DIV SHDN 3V/DIV SHDN 4367 G16 4367 G17 4367 G18 5ms/DIV 400µs/DIV 400µs/DIV 4367fb 6 For more information www.linear.com/LTC4367