Datasheet LT1027LS8 (Analog Devices) - 3

LT1027LS8
e lecTrical characTerisTics The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VIN = 10V, ILOAD = 0A unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOUT Output Voltage (Note 2) 4.995 5.000 5.005 V TCVOUT Output Voltage Temperature Coefficient (Note 3) l 2 5 ppm/°C Line Regulation (Note 4) 8V ≤ VIN ≤ 10V 6 12 ppm/V l 25 ppm/V 10V ≤ VIN ≤ 40V 3 6 ppm/V l 8 ppm/V Load Regulation (Notes 4, 6) Sourcing Current –8 8 12 ppm/mA 0 ≤ IOUT ≤ 15mA, 0°C to 85°C l –10 15 ppm/mA 0 ≤ IOUT ≤ 5mA, –40°C –10 15 ppm/mA Sinking Current 0 ≤ IOUT ≤ 10mA 0°C to 85°C l 30 120 ppm/mA –40°C 160 ppm/mA Supply Current 2.2 3.1 mA l 3.5 mA VTRIM Adjust Range l ±30 ±50 mV en Output Noise (Note 5) 0.1Hz ≤ f ≤ 10Hz 3 µVP-P 10Hz ≤ f ≤ 1kHz 2.0 6.0 µVRMS Long-Term Stability of Output Voltage (Note 7) ∆t = First 1000Hrs 12 ppm ∆t = First 3000Hrs 18 ppm Temperature Hysteresis of Output (Note 8) ∆T = ±25°C 6 ppm ∆T = 0°C to 70°C 8 ppm ∆T = –40°C to 85°C 12 ppm
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 7:
Long-term stability typically has a logarithmic characteristic and may cause permanent damage to the device. Exposure to any Absolute therefore, changes after 1000 hours tend to be much smaller than before Maximum Rating condition for extended periods may affect device that time. Total drift in the second thousand hours is normally less than reliability and lifetime. one third that of the first thousand hours, with a continuing trend toward
Note 2:
Output voltage is measured immediately after turn-on. Changes reduced drift with time. Significant improvement in long-term drift can be due to chip warm-up are typically less than 0.005%. realized by preconditioning the IC with a 100-200 hour, 125°C burn in.
Note 3:
Temperature coefficient is measured by dividing the change in Long term stability will also be affected by differential stresses between output voltage over the temperature range by the change in temperature. the IC and the board material created during board assembly. Temperature cycling and baking of completed boards is often used to reduce these
Note 4:
Line and load regulation are measured on a pulse basis. Output stresses in critical applications. changes due to die temperature change must be taken into account separately.
Note 8:
Hysteresis in output voltage is created by package stress that differs depending on whether the IC was previously at a higher or lower
Note 5:
RMS noise is measured with an 8-pole bandpass filter with a temperature. Output voltage is always measured at 25°C, but the IC is center frequency of 30Hz and a Q of 1.5. The filter output is then rectified cycled to high or low temperature before successive measurements. and integrated for a fixed time period, resulting in an average, as opposed Hysteresis is roughly proportional to the square of temperature change. to RMS voltage. A correction factor is used to convert average to RMS. Hysteresis is not normally a problem for operational temperature This value is then used to obtain RMS noise voltage in the 10Hz to 1000Hz excursions, but can be significant in critical narrow temperature range frequency band. This test also screens for low frequency “popcorn” noise applications where the instrument might be stored at high or low within the bandwidth of the filter. temperatures. Hysteresis measurements are preconditioned by one
Note 6:
Devices typically exhibit a slight negative DC output impedance of temperature cycle. –0.015Ω. This compensates for PC trace resistance, improving regulation at the load. 1027ls8f For more information www.linear.com/LT1027LS8 3 Document Outline Features Applications Typical Application Description Absolute Maximum Ratings Order Information Pin Configuration Typical Performance Characteristics Pin Functions Block Diagram Applications Information Typical Applications Package Description Typical Application Related Parts