Datasheet BC556, BC557, BC558, BC559, BC560 (Fairchild)
| Fabricante | Fairchild |
| Descripción | PNP Epitaxial Silicon Transistor. Switching and Amplifier |
| Páginas / Página | 4 / 1 — BC556/. 557/. BC556/557/558/559/560. 558. /559. Switching and Amplifier. … |
| Formato / tamaño de archivo | PDF / 45 Kb |
| Idioma del documento | Inglés |
BC556/. 557/. BC556/557/558/559/560. 558. /559. Switching and Amplifier. /56. PNP Epitaxial Silicon Transistor
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BC556/ 557/ BC556/557/558/559/560 558 /559 Switching and Amplifier
• High Voltage: BC556, VCEO= -65V
/56
• Low Noise: BC559, BC560 • Complement to BC546 ... BC 550
0
TO-92 1 1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BC556 -80 V : BC557/560 -50 V : BC558/559 -30 V VCEO Collector-Emitter Voltage : BC556 -65 V : BC557/560 -45 V : BC558/559 -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C
Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA hFE DC Current Gain VCE= -5V, IC=2mA 110 800 VCE Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -90 -300 mV (sat) IC= -100mA, IB= -5mA -250 -650 mV VBE (sat) Collector-Base Saturation Voltage IC= -10mA, IB= -0.5mA -700 mV IC= -100mA, IB= -5mA -900 mV VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA -600 -660 -750 mV VCE= -5V, IC= -10mA -800 mV fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=10MHz 150 MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF NF Noise Figure : BC556/557/558 VCE= -5V, IC= -200µA 2 10 dB : BC559/560 f=1KHz, RG=2KΩ 1 4 dB : BC559 VCE= -5V, IC= -200µA 1.2 4 dB : BC560 RG=2KΩ, f=30~15000MHz 1.2 2 dB
hFE Classification
Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
• High Voltage: BC556, VCEO= -65V
/56
• Low Noise: BC559, BC560 • Complement to BC546 ... BC 550
0
TO-92 1 1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BC556 -80 V : BC557/560 -50 V : BC558/559 -30 V VCEO Collector-Emitter Voltage : BC556 -65 V : BC557/560 -45 V : BC558/559 -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C
Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA hFE DC Current Gain VCE= -5V, IC=2mA 110 800 VCE Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -90 -300 mV (sat) IC= -100mA, IB= -5mA -250 -650 mV VBE (sat) Collector-Base Saturation Voltage IC= -10mA, IB= -0.5mA -700 mV IC= -100mA, IB= -5mA -900 mV VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA -600 -660 -750 mV VCE= -5V, IC= -10mA -800 mV fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=10MHz 150 MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF NF Noise Figure : BC556/557/558 VCE= -5V, IC= -200µA 2 10 dB : BC559/560 f=1KHz, RG=2KΩ 1 4 dB : BC559 VCE= -5V, IC= -200µA 1.2 4 dB : BC560 RG=2KΩ, f=30~15000MHz 1.2 2 dB
hFE Classification
Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002