Datasheet LTC3765 (Analog Devices) - 3
| Fabricante | Analog Devices |
| Descripción | Active Clamp Forward Controller and Gate Driver |
| Páginas / Página | 24 / 3 — ELECTRICAL. CHARACTERISTICS The. denotes the specifications which apply … |
| Formato / tamaño de archivo | PDF / 273 Kb |
| Idioma del documento | Inglés |
ELECTRICAL. CHARACTERISTICS The. denotes the specifications which apply over the specified operating
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LTC3765
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the specified operating junction temperature range, otherwise specifications are at TA = 25°C (Note 2). VCC = 12V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Gate Drivers (PG, AG, DELAY)
VOHPG PG High Output Voltage IPG = –100mA 11 V IPUPG PG Peak Pull-Up Current 2.5 A RPDPG PG Pull-Down Resistance IPG = 100mA 1.3 Ω trPG PG Rise Time 20% to 80%, CPG = 4.7nF 20 ns tfPG PG Fall Time 20% to 80%, CPG = 4.7nF 20 ns RPUAG AG Pull-Up Resistance IAG = –10mA 12 Ω RPDAG AG Pull-Down Resistance IAG = 10mA 9 Ω tDAG AG Turn-On Delay Time 180 ns tDPG PG Turn-On Delay Time RDELAY = 0Ω 40 ns RDELAY = 10kΩ 120 140 160 ns RDELAY = 50kΩ 390 460 530 ns
Oscillator (FS/UV) and Soft-Start (SSFLT)
fOSC Oscillator Frequency RFS = 75kΩ 75 kHz RFS = 10kΩ 430 kHz DCMAX Oscillator Maximum Duty Cycle VSSFLT = 3.5V 70 % VFSUVH FS/UV Output High VRUN = 1V 5 V IFSUV FS/UV Pull-Up Current VRUN = 1V, VFS/UV = 1.5V 50 µA ISS(C) Soft-Start Charge Current VRUN = 1.3V, VSSFLT = 1V –4 µA VRUN ≥ 3.75V, VSSFLT = 1V –1.6 –0.5 µA ISS(D) Soft-Start Discharge Current Timing Out After Fault, VSSFLT = 2V 1.25 µA VFLTH Fault Output High VCC = 6.7V 5.75 6.5 V VFLTD Fault Detection Voltage 5 5.5 V
Overcurrent (I + – S , IS ) and Direct Flux Limit (ISMAG, RCORE)
V + – IS Overcurrent Threshold VISTH = VIS –VIS l 130 150 170 mV V – ISMAG ISMAG Limit Negative Threshold Relative to SGND or VCC –1.15 –1 –0.85 V V + ISMAG ISMAG Limit Positive Threshold Relative to SGND or VCC 0.85 1 1.15 V MISMAG ISMAG Replicated Slope RCORE = 50kΩ, VRUN = 1.25V 75 mV/µs RCORE = 50kΩ, VRUN = 6.25V 375 mV/µs RCORE = 10kΩ, VRUN = 1.25V 335 mV/µs RCORE = 10kΩ, VRUN = 6.25V 1700 mV/µs
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings Note that the maximum ambient temperature consistent with these may cause permanent damage to the device. Exposure to any Absolute specifications is determined by specific operating conditions in Maximum Rating condition for extended periods may affect device conjunction with board layout, the rated package thermal impedance and reliability and lifetime. other environmental factors.
Note 2:
The LTC3765 is tested under pulsed-load conditions such that
Note 3:
This IC includes overtemperature protection that is intended to TJ ≈ TA. The LTC3765E is guaranteed to meet specifications from protect the device during momentary overload conditions. The maximum 0°C to 85°C junction temperature. Specifications over the –40°C to rated junction temperature will be exceeded when this protection is active. 125°C operating junction temperature range are assured by design, Continuous operation above the specified absolute maximum operating characterization and correlation with statistical process controls. The junction temperature may impair device reliability or permanently damage LTC3765I is guaranteed over the –40°C to 125°C operating junction the device. temperature range, the LTC3765H is guaranteed over the –40°C to 150°C
Note 4:
The linear regulator output voltage is measured with a Vishay operating junction temperature range and the LTC3765MP is tested and Siliconix Si3440DV N-channel MOSFET external pass device. guaranteed over the –55°C to 150°C operating junction temperature range.
Note 5:
I High junction temperatures degrade operating lifetimes; operating lifetime CC is the sum of current into NDRV and VCC. is derated for junction temperature greater than 125°C. The junction
Note 6:
Rectifier forward voltage drop is the sum of the drop across the temperature (T rectifier diode and synchronous switch. J) is calculated from the ambient temperature (TA) and power dissipation (PD) according to the formula: TJ = TA + (PD • 45°C/W) 3765fb For more information www.linear.com/LTC3765 3 Document Outline Features Applications Description Typical Application Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Timing Diagram Operation Applications Information Package Description Revision History Typical Application Related Parts
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the specified operating junction temperature range, otherwise specifications are at TA = 25°C (Note 2). VCC = 12V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Gate Drivers (PG, AG, DELAY)
VOHPG PG High Output Voltage IPG = –100mA 11 V IPUPG PG Peak Pull-Up Current 2.5 A RPDPG PG Pull-Down Resistance IPG = 100mA 1.3 Ω trPG PG Rise Time 20% to 80%, CPG = 4.7nF 20 ns tfPG PG Fall Time 20% to 80%, CPG = 4.7nF 20 ns RPUAG AG Pull-Up Resistance IAG = –10mA 12 Ω RPDAG AG Pull-Down Resistance IAG = 10mA 9 Ω tDAG AG Turn-On Delay Time 180 ns tDPG PG Turn-On Delay Time RDELAY = 0Ω 40 ns RDELAY = 10kΩ 120 140 160 ns RDELAY = 50kΩ 390 460 530 ns
Oscillator (FS/UV) and Soft-Start (SSFLT)
fOSC Oscillator Frequency RFS = 75kΩ 75 kHz RFS = 10kΩ 430 kHz DCMAX Oscillator Maximum Duty Cycle VSSFLT = 3.5V 70 % VFSUVH FS/UV Output High VRUN = 1V 5 V IFSUV FS/UV Pull-Up Current VRUN = 1V, VFS/UV = 1.5V 50 µA ISS(C) Soft-Start Charge Current VRUN = 1.3V, VSSFLT = 1V –4 µA VRUN ≥ 3.75V, VSSFLT = 1V –1.6 –0.5 µA ISS(D) Soft-Start Discharge Current Timing Out After Fault, VSSFLT = 2V 1.25 µA VFLTH Fault Output High VCC = 6.7V 5.75 6.5 V VFLTD Fault Detection Voltage 5 5.5 V
Overcurrent (I + – S , IS ) and Direct Flux Limit (ISMAG, RCORE)
V + – IS Overcurrent Threshold VISTH = VIS –VIS l 130 150 170 mV V – ISMAG ISMAG Limit Negative Threshold Relative to SGND or VCC –1.15 –1 –0.85 V V + ISMAG ISMAG Limit Positive Threshold Relative to SGND or VCC 0.85 1 1.15 V MISMAG ISMAG Replicated Slope RCORE = 50kΩ, VRUN = 1.25V 75 mV/µs RCORE = 50kΩ, VRUN = 6.25V 375 mV/µs RCORE = 10kΩ, VRUN = 1.25V 335 mV/µs RCORE = 10kΩ, VRUN = 6.25V 1700 mV/µs
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings Note that the maximum ambient temperature consistent with these may cause permanent damage to the device. Exposure to any Absolute specifications is determined by specific operating conditions in Maximum Rating condition for extended periods may affect device conjunction with board layout, the rated package thermal impedance and reliability and lifetime. other environmental factors.
Note 2:
The LTC3765 is tested under pulsed-load conditions such that
Note 3:
This IC includes overtemperature protection that is intended to TJ ≈ TA. The LTC3765E is guaranteed to meet specifications from protect the device during momentary overload conditions. The maximum 0°C to 85°C junction temperature. Specifications over the –40°C to rated junction temperature will be exceeded when this protection is active. 125°C operating junction temperature range are assured by design, Continuous operation above the specified absolute maximum operating characterization and correlation with statistical process controls. The junction temperature may impair device reliability or permanently damage LTC3765I is guaranteed over the –40°C to 125°C operating junction the device. temperature range, the LTC3765H is guaranteed over the –40°C to 150°C
Note 4:
The linear regulator output voltage is measured with a Vishay operating junction temperature range and the LTC3765MP is tested and Siliconix Si3440DV N-channel MOSFET external pass device. guaranteed over the –55°C to 150°C operating junction temperature range.
Note 5:
I High junction temperatures degrade operating lifetimes; operating lifetime CC is the sum of current into NDRV and VCC. is derated for junction temperature greater than 125°C. The junction
Note 6:
Rectifier forward voltage drop is the sum of the drop across the temperature (T rectifier diode and synchronous switch. J) is calculated from the ambient temperature (TA) and power dissipation (PD) according to the formula: TJ = TA + (PD • 45°C/W) 3765fb For more information www.linear.com/LTC3765 3 Document Outline Features Applications Description Typical Application Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Timing Diagram Operation Applications Information Package Description Revision History Typical Application Related Parts