Datasheet GBPC6005, GBPC601, GBPC602, GBPC604, GBPC606, GBPC608, GBPC610 (Vishay) - 3

GBPC6005, GBPC601, GBPC602, GBPC604, GBPC606, GBPC608, GBPC610
www.vishay.com Vishay General Semiconductor 100 1000 T = 25 °C J f = 1.0 MHz V = 50 mVp-p sig 10 rrent (A) u ard C rw 1 o 100 s F u 0.1 nction Capacitance (pF) u T = 25 °C J J Pulse Width = 300 µs 50 - 400 V Instantaneo 1 % Duty Cycle 600 - 1000 V 0.01 10 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 1000 100 T = 125 °C A (°C/W) 100 rrent (µA) u 10 T = 100 °C J erse C v 10 Impedance s Re mal u 1 1 T = 25 °C J Instantaneo ansient TherrT 0.1 0.1 0 20 40 60 80 100 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Heating Time (s) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Style GBPC6
0.630 (16.00) Hole For #6 Screw 0.590 (14.98) 0.158 (4.01) DIA. 0.445 (11.30) 0.142 (3.61) 0.405 (10.29) AC 0.630 (16.00) 0.445 (11.30) 0.590 (14.98) 0.405 (10.29) AC 0.094 (2.4) x 45° 0.128 (3.25) 0.048 (1.22) 0.040 (1.02) TYP. 0.042 (1.07) DIA. 0.038 (0.96) 0.750 (19.05) MIN. 0.200 (5.08) 0.160 (4.06) Polarity shown on side of case: Positive lead by beveled corner Revision: 08-Jul-13
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Document Number: 88613 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000