Datasheet IRF3205PbF (Infineon) - 3
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 8 / 3 — Fig 1. Fig 2. Fig 3. Fig 4 |
| Formato / tamaño de archivo | PDF / 221 Kb |
| Idioma del documento | Inglés |
Fig 1. Fig 2. Fig 3. Fig 4
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IRF3205PbF 1000 1000 VGS VGS TOP 15V TOP 15V ) 10V 10V 8.0V 8.0V 7.0V 7.0V 6.0V nt (A 6.0V 5.5V 5.5V 5.0V 5.0V BOTTOM4.5V urrent (A urre BOTTOM4.5V 100 100 C ource C ource -S 4.5V 10 rain-to-S 10 4.5V rain-to I , D D I , D D 20µs PULSE WIDTH 20µs PULSE WIDTH T = J 25 °C T = 175 J C ° 1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) DS V , Drain-to-Source Voltage (V) DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.5 ID= 107A ) T = 25 C J ° nt (A esistance 2.0 urre T = 175 C J ° n R 100 1.5 ource C ource O alized) -S -S m or 1.0 (N 10 rain-to rain-to 0.5 I , D D (on) V = DS 25V S , DD 20µs PULSE WIDTH R VGS= 10V 1 0.0 4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V , Gate-to-Source Voltage (V) T , Junction Temperature ( C ° ) GS J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.5 ID= 107A ) T = 25 C J ° nt (A esistance 2.0 urre T = 175 C J ° n R 100 1.5 ource C ource O alized) -S -S m or 1.0 (N 10 rain-to rain-to 0.5 I , D D (on) V = DS 25V S , DD 20µs PULSE WIDTH R VGS= 10V 1 0.0 4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V , Gate-to-Source Voltage (V) T , Junction Temperature ( C ° ) GS J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3