Datasheet AD8028-KGD-CHIP (Analog Devices) - 5
| Fabricante | Analog Devices |
| Descripción | Low Distortion, High Speed Rail-to-Rail Input/Output Amplifier |
| Páginas / Página | 8 / 5 — Known Good Die. AD8028-KGD-CHIP. Table 3. Parameter. Test … |
| Revisión | B |
| Formato / tamaño de archivo | PDF / 182 Kb |
| Idioma del documento | Inglés |
Known Good Die. AD8028-KGD-CHIP. Table 3. Parameter. Test Conditions/Comments. Min. Typ. Max. Status1. Unit
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Known Good Die AD8028-KGD-CHIP
VS
=
3 V at TA = 25°C, RL = 1 kΩ to midsupply, unless otherwise noted.
Table 3. Parameter Test Conditions/Comments Min Typ Max Status1 Unit
DYNAMIC PERFORMANCE –3 dB Bandwidth G = 1, VOUT = 0.2 V p-p 125 180 GBD MHz G = 1, VOUT = 2 V p-p 19 29 GBD MHz Bandwidth for 0.1 dB Flatness G = 2, VOUT = 0.2 V p-p 10 MHz Slew Rate G = +1, VOUT = 2 V step/G = –1, VOUT = 2 V 73/100 V/µs step Settling Time to 0.1% G = 2, VOUT = 2 V step 48 ns NOISE/DISTORTION PERFORMANCE Spurious-Free Dynamic Range (SFDR) fC = 1 MHz, VOUT = 2 V p-p, RF = 24.9 Ω 85 dBc fC = 5 MHz, VOUT = 2 V p-p, RF = 24.9 Ω 64 dBc Input Voltage Noise f = 100 kHz 4.3 nV/√Hz Input Current Noise f = 100 kHz 1.6 pA/√Hz Differential Gain Error NTSC, G = 2, RL = 150 Ω 0.15 % Differential Phase Error NTSC, G = 2, RL = 150 Ω 0.20 Degrees Crosstalk, Output to Output G = 1, RL = 100 Ω, VOUT = 2 V p-p, VS = 3 V –89 dB @ 1 MHz DC PERFORMANCE Input Offset Voltage SELECT = three-state or open, PNP 200 µV active SELECT = high NPN active 240 µV Input Offset Voltage Drift TMIN to TMAX 2 µV/°C Input Bias Current VCM = 1.5 V, NPN active 4 µA TMIN to TMAX 4 µA VCM = 1.5 V, PNP active –8 µA TMIN to TMAX –8 µA Input Offset Current ±0.1 µA Open-Loop Gain VOUT = 1 V to 2 V 100 dB INPUT CHARACTERISTICS Input Impedance 6 MΩ Input Capacitance 2 pF Input Common-Mode Voltage Range RL = 1 kΩ –0.2 to +3.2 V Common-Mode Rejection Ratio VCM = 0 V to 1.5 V 100 dB SELECT PIN Crossover Low, Selection Input 1.7 to 3 V Voltage Three-state < ±20 µA Crossover High, Selection Input 1.1 to 1.7 V Voltage Disable Input Voltage 0 to 1.1 V Disable Switching Speed 50% of input to <10% of final VOUT 1150 ns Enable Switching Speed 50 ns OUTPUT CHARACTERISTICS Output Overdrive Recovery Time VIN = –1 V to +4 V, G = –1 55/55 ns (Rising/Falling Edge) Output Voltage Swing RL = 1 kΩ –VS + 0.09 +VS – 0.03, +VS Tested V –Vs + 0.03 Short-Circuit Current Sinking and sourcing 72 mA Off Isolation VIN = 0.2 V p-p, f = 1 MHz, SELECT = –49 dB low Capacitive Load Drive 30% overshoot 20 pF POWER SUPPLY Operating Range 2.7 12 GBD V Quiescent Current/Amplifier 6.0 mA Quiescent Current (Disabled) SELECT = low 300 µA Power Supply Rejection Ratio VS ± 1 V 100 dB 1 GBD is guaranteed by design. Rev. B | Page 5 of 8 Document Outline Features Applications General Description Revision History Specifications Absolute Maximum Ratings ESD Caution Pad Configuration and Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide
Known Good Die AD8028-KGD-CHIP
VS
=
3 V at TA = 25°C, RL = 1 kΩ to midsupply, unless otherwise noted.
Table 3. Parameter Test Conditions/Comments Min Typ Max Status1 Unit
DYNAMIC PERFORMANCE –3 dB Bandwidth G = 1, VOUT = 0.2 V p-p 125 180 GBD MHz G = 1, VOUT = 2 V p-p 19 29 GBD MHz Bandwidth for 0.1 dB Flatness G = 2, VOUT = 0.2 V p-p 10 MHz Slew Rate G = +1, VOUT = 2 V step/G = –1, VOUT = 2 V 73/100 V/µs step Settling Time to 0.1% G = 2, VOUT = 2 V step 48 ns NOISE/DISTORTION PERFORMANCE Spurious-Free Dynamic Range (SFDR) fC = 1 MHz, VOUT = 2 V p-p, RF = 24.9 Ω 85 dBc fC = 5 MHz, VOUT = 2 V p-p, RF = 24.9 Ω 64 dBc Input Voltage Noise f = 100 kHz 4.3 nV/√Hz Input Current Noise f = 100 kHz 1.6 pA/√Hz Differential Gain Error NTSC, G = 2, RL = 150 Ω 0.15 % Differential Phase Error NTSC, G = 2, RL = 150 Ω 0.20 Degrees Crosstalk, Output to Output G = 1, RL = 100 Ω, VOUT = 2 V p-p, VS = 3 V –89 dB @ 1 MHz DC PERFORMANCE Input Offset Voltage SELECT = three-state or open, PNP 200 µV active SELECT = high NPN active 240 µV Input Offset Voltage Drift TMIN to TMAX 2 µV/°C Input Bias Current VCM = 1.5 V, NPN active 4 µA TMIN to TMAX 4 µA VCM = 1.5 V, PNP active –8 µA TMIN to TMAX –8 µA Input Offset Current ±0.1 µA Open-Loop Gain VOUT = 1 V to 2 V 100 dB INPUT CHARACTERISTICS Input Impedance 6 MΩ Input Capacitance 2 pF Input Common-Mode Voltage Range RL = 1 kΩ –0.2 to +3.2 V Common-Mode Rejection Ratio VCM = 0 V to 1.5 V 100 dB SELECT PIN Crossover Low, Selection Input 1.7 to 3 V Voltage Three-state < ±20 µA Crossover High, Selection Input 1.1 to 1.7 V Voltage Disable Input Voltage 0 to 1.1 V Disable Switching Speed 50% of input to <10% of final VOUT 1150 ns Enable Switching Speed 50 ns OUTPUT CHARACTERISTICS Output Overdrive Recovery Time VIN = –1 V to +4 V, G = –1 55/55 ns (Rising/Falling Edge) Output Voltage Swing RL = 1 kΩ –VS + 0.09 +VS – 0.03, +VS Tested V –Vs + 0.03 Short-Circuit Current Sinking and sourcing 72 mA Off Isolation VIN = 0.2 V p-p, f = 1 MHz, SELECT = –49 dB low Capacitive Load Drive 30% overshoot 20 pF POWER SUPPLY Operating Range 2.7 12 GBD V Quiescent Current/Amplifier 6.0 mA Quiescent Current (Disabled) SELECT = low 300 µA Power Supply Rejection Ratio VS ± 1 V 100 dB 1 GBD is guaranteed by design. Rev. B | Page 5 of 8 Document Outline Features Applications General Description Revision History Specifications Absolute Maximum Ratings ESD Caution Pad Configuration and Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide