Datasheet CD4098BMS (Intersil) - 5

FabricanteIntersil
DescripciónCMOS Dual Monostable Multivibrator
Páginas / Página11 / 5 — TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued). LIMITS. …
Revisión2017-12-22
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Idioma del documentoInglés

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued). LIMITS. PARAMETER. SYMBOL. CONDITIONS. NOTES. TEMPERATURE. MIN. MAX. UNITS

TABLE 3 ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS

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CD4098BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS
Propagation Delay TPHL1 VDD = 10V 1, 2, 3, 4 +25oC - 250 ns +TR, -TR to Q, Q TPLH1 VDD = 15V 1, 2, 3, 4 +25oC - 200 ns CX  15pF Propagation Delay TPHL2 VDD = 5V 1, 2, 3 +25oC - 450 ns Reset CX  15pF TPLH2 VDD = 10V 1, 2, 3, 4 +25oC - 250 ns VDD = 15V 1, 2, 3,4 +25oC - 150 ns Transition Time TTHL1 VDD = 10V 1, 2, 3, 4 +25oC - 100 ns CX = 15pF to 10,000pF VDD = 15V 1, 2, 3, 4 +25oC - 80 ns Transition Time TTLH2 VDD = 5V 1, 2, 3 +25oC - 300 ns CX = 0.01F to 0.1F TTHL2 VDD = 10V 1, 2, 3, 5 +25oC - 150 ns VDD = 15V 1, 2, 3, 5 +25oC - 130 ns Transition Time TTHL3 VDD = 5V 1, 2, 3 +25oC - 500 ns CX = 0.1F to 1F VDD = 10V 1, 2, 3, 4 +25oC - 300 ns VDD = 15V 1, 2, 3, 4 +25oC - 160 ns Transition Time TTLH1 VDD = 10V 1, 2, 3, 4 +25oC - 100 ns CX  15pF VDD = 15V 1, 2, 3, 4 +25oC - 80 ns Minimum Reset Pulse TW VDD = 5V 1, 2, 3, 5 +25oC - 200 ns Width, CX = 15pF VDD = 10V 1, 2, 3, 5 +25oC - 80 ns VDD = 15V 1, 2, 3, 5 +25oC - 60 ns Minimum Reset Pulse TW VDD = 5V 1, 2, 3, 5 +25oC - 1200 ns Width, CX = 1000pF VDD = 10V 1, 2, 3, 5 +25oC - 600 ns VDD = 15V 1, 2, 3,5 +25oC - 500 ns Minimum Reset Pulse TW VDD = 5V 1, 2, 3, 5 +25oC - 50 s Width, CX = 0.1F VDD = 10V 1, 2, 3, 5 +25oC - 30 s VDD = 15V 1, 2, 3, 5 +25oC - 20 s Pulse Width Match Be- TW VDD = 5V 1, 2, 3, 6 +25oC - 10 % tween Circuits in Same VDD = 10V 1, 2, 3, 6 +25oC - 15 % Package VDD = 15V 1, 2, 3, 6 +25oC - 15 % Trigger Rise or Fall Time TRTR VDD = 5V to 15V 1, 2 +25oC - 100 s TFTR Input Capacitance CIN Any Inputs 1, 2 +25oC - 7.5 pF NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, inputs tR, tF < 20ns. 4. RX = 5K to 10M. 5. RX = 100k 6. RX = 10k
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS
Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC - 7.5 A N Threshold Voltage VNTH VDD = 10V, ISS = -10A 1, 4 +25oC -2.8 -0.2 V FN3332 Rev 0.00 Page 5 of 11 December 1992